Subsurface damage of single crystalline silicon carbide in nanoindentation tests

Jiwang Yan, Xiaohui Gai, Hirofumi Harada

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The response of single crystalline silicon carbide (SiC) to a Berkovich nanoindenter was investigated by examining the indents using a transmission electron microscope and the selected area electron diffraction technique. It was found that the depth of indentation-induced subsurface damage was far larger than the indentation depth, and the damaging mechanism of SiC was distinctly different from that of single crystalline silicon. For silicon, a broad amorphous region is formed underneath the indenter after unloading; for SiC, however, no amorphous phase was detected. Instead, a polycrystalline structure with a grain size of ten nanometer level was identified directly under the indenter tip. Micro cracks, basal plane dislocations and possible cross slips were also found around the indent. These finding provide useful information for ultraprecision manufacturing of SiC wafers.

Original languageEnglish
Pages (from-to)7808-7811
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume10
Issue number11
DOIs
Publication statusPublished - 2010 Nov
Externally publishedYes

Fingerprint

Nanoindentation
nanoindentation
Silicon carbide
silicon carbides
Crystalline materials
damage
Silicon
indentation
Indentation
Electrons
unloading
silicon
Unloading
Electron diffraction
slip
Electron microscopes
manufacturing
electron diffraction
cracks
electron microscopes

Keywords

  • Nanoindentation
  • Phase Transition
  • Semiconductor Manufacturing
  • SiC
  • Silicon Carbide
  • Subsurface Damage

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Subsurface damage of single crystalline silicon carbide in nanoindentation tests. / Yan, Jiwang; Gai, Xiaohui; Harada, Hirofumi.

In: Journal of Nanoscience and Nanotechnology, Vol. 10, No. 11, 11.2010, p. 7808-7811.

Research output: Contribution to journalArticle

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