Successful measurements of electron energy dependence of interface-trap-induced scattering in N-MOSFETs - Developed hall effect measurements and comparison with theory

Shigeki Kobayashi, Takamitsu Ishihara, Masumi Saitoh, Yukio Nakabayashi, Toshinori Numata, Ken Uchida

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The dependence of the interface-trap-induced scattering on the electron kinetic energy (εele) in nMOSFETs is investigated experimentally. The procedure to extract the accurate εele dependence of the interface-trap-induced scattering relationship is developed based on the careful Hall effect measurements. As a result, it is demonstrated that as εele increases, the interface-trap-induced scattering is suppressed more greatly than calculated by the conventional two-dimensional Coulomb scattering model. It is also found that the εele dependence of the interface-trap-induced scattering is enhanced as D it increases.

    Original languageEnglish
    Title of host publication2009 IEEE International Reliability Physics Symposium, IRPS 2009
    Pages8-12
    Number of pages5
    DOIs
    Publication statusPublished - 2009 Nov 12
    Event2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC, Canada
    Duration: 2009 Apr 262009 Apr 30

    Publication series

    NameIEEE International Reliability Physics Symposium Proceedings
    ISSN (Print)1541-7026

    Other

    Other2009 IEEE International Reliability Physics Symposium, IRPS 2009
    CountryCanada
    CityMontreal, QC
    Period09/4/2609/4/30

    Keywords

    • Electron energy
    • Hall effect measurement
    • Hall factor
    • Interface states
    • Scattering

    ASJC Scopus subject areas

    • Engineering(all)

    Fingerprint Dive into the research topics of 'Successful measurements of electron energy dependence of interface-trap-induced scattering in N-MOSFETs - Developed hall effect measurements and comparison with theory'. Together they form a unique fingerprint.

  • Cite this

    Kobayashi, S., Ishihara, T., Saitoh, M., Nakabayashi, Y., Numata, T., & Uchida, K. (2009). Successful measurements of electron energy dependence of interface-trap-induced scattering in N-MOSFETs - Developed hall effect measurements and comparison with theory. In 2009 IEEE International Reliability Physics Symposium, IRPS 2009 (pp. 8-12). [5173217] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2009.5173217