Successful measurements of electron energy dependence of interface-trap-induced scattering in N-MOSFETs - Developed hall effect measurements and comparison with theory

Shigeki Kobayashi, Takamitsu Ishihara, Masumi Saitoh, Yukio Nakabayashi, Toshinori Numata, Ken Uchida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The dependence of the interface-trap-induced scattering on the electron kinetic energy (εele) in nMOSFETs is investigated experimentally. The procedure to extract the accurate εele dependence of the interface-trap-induced scattering relationship is developed based on the careful Hall effect measurements. As a result, it is demonstrated that as εele increases, the interface-trap-induced scattering is suppressed more greatly than calculated by the conventional two-dimensional Coulomb scattering model. It is also found that the εele dependence of the interface-trap-induced scattering is enhanced as D it increases.

Original languageEnglish
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
Pages8-12
Number of pages5
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC, Canada
Duration: 2009 Apr 262009 Apr 30

Other

Other2009 IEEE International Reliability Physics Symposium, IRPS 2009
CountryCanada
CityMontreal, QC
Period09/4/2609/4/30

Fingerprint

Hall effect
Kinetic energy
Scattering
Electrons

Keywords

  • Electron energy
  • Hall effect measurement
  • Hall factor
  • Interface states
  • Scattering

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kobayashi, S., Ishihara, T., Saitoh, M., Nakabayashi, Y., Numata, T., & Uchida, K. (2009). Successful measurements of electron energy dependence of interface-trap-induced scattering in N-MOSFETs - Developed hall effect measurements and comparison with theory. In IEEE International Reliability Physics Symposium Proceedings (pp. 8-12). [5173217] https://doi.org/10.1109/IRPS.2009.5173217

Successful measurements of electron energy dependence of interface-trap-induced scattering in N-MOSFETs - Developed hall effect measurements and comparison with theory. / Kobayashi, Shigeki; Ishihara, Takamitsu; Saitoh, Masumi; Nakabayashi, Yukio; Numata, Toshinori; Uchida, Ken.

IEEE International Reliability Physics Symposium Proceedings. 2009. p. 8-12 5173217.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kobayashi, S, Ishihara, T, Saitoh, M, Nakabayashi, Y, Numata, T & Uchida, K 2009, Successful measurements of electron energy dependence of interface-trap-induced scattering in N-MOSFETs - Developed hall effect measurements and comparison with theory. in IEEE International Reliability Physics Symposium Proceedings., 5173217, pp. 8-12, 2009 IEEE International Reliability Physics Symposium, IRPS 2009, Montreal, QC, Canada, 09/4/26. https://doi.org/10.1109/IRPS.2009.5173217
Kobayashi S, Ishihara T, Saitoh M, Nakabayashi Y, Numata T, Uchida K. Successful measurements of electron energy dependence of interface-trap-induced scattering in N-MOSFETs - Developed hall effect measurements and comparison with theory. In IEEE International Reliability Physics Symposium Proceedings. 2009. p. 8-12. 5173217 https://doi.org/10.1109/IRPS.2009.5173217
Kobayashi, Shigeki ; Ishihara, Takamitsu ; Saitoh, Masumi ; Nakabayashi, Yukio ; Numata, Toshinori ; Uchida, Ken. / Successful measurements of electron energy dependence of interface-trap-induced scattering in N-MOSFETs - Developed hall effect measurements and comparison with theory. IEEE International Reliability Physics Symposium Proceedings. 2009. pp. 8-12
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