Suppression of indefinite peaks in InAs/GaAs quantum dot spectrum by low temperature capping in the indium-flush method

N. Kumagai, S. Ohkouchi, S. Nakagawa, M. Nomura, Y. Ota, M. Shirane, Y. Igarashi, S. Yorozu, S. Iwamoto, Y. Arakawa

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

We have investigated effects of growth temperature of thin GaAs capping layer in the initial stage of indium-flush process using atomic force microscopy and microscopic photoluminescence (μ-PL) methods. The shape of capped InAs quantum dot (QD) and its μ-PL properties are sensitive to the growth temperature of thin GaAs capping layer. In the case of the high temperature cap, the QD shape in initial capping stage is elongated along the [1 1 -0] direction, and μ-PL spectrum shows several peaks accompanied with indefinite peaks. On the other hand, the low temperature case, the QD shape is kept in isotropic and μ-PL spectrum shows distinctive emissions from excitonic states of the QD with suppressed indefinite peaks. These results indicate that the low temperature capping is effective to keep an isotropic shape of QD and suppress indefinite peaks.

Original languageEnglish
Pages (from-to)2753-2756
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume42
Issue number10
DOIs
Publication statusPublished - 2010 Sep
Externally publishedYes

Keywords

  • Indium arsenide
  • Molecular beam epitaxy
  • Photoluminescence
  • Self-assembled quantum dot
  • Single photon emitters

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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