Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium

Michihiro Yamada, Kentarou Sawano, Masashi Uematsu, Kohei M Itoh

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We demonstrate the formation of abrupt phosphorus (P) δ-doping profiles in germanium (Ge) by the insertion of ultra-thin silicon (Si) layers. The Si layers at the δ-doping region significantly suppress the surface segregation of P during the molecular beam epitaxial growth of Ge and high-concentration active P donors are confined within a few nm of the initial doping position. The current-voltage characteristics of the P δ-doped layers with Si insertion show excellent Ohmic behaviors with low enough resistivity for ultra-shallow Ohmic contacts on n-type Ge.

Original languageEnglish
Article number132101
JournalApplied Physics Letters
Volume107
Issue number13
DOIs
Publication statusPublished - 2015 Sep 28

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insertion
electric contacts
germanium
retarding
silicon
molecular beams
phosphorus
electrical resistivity
electric potential
profiles

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium. / Yamada, Michihiro; Sawano, Kentarou; Uematsu, Masashi; Itoh, Kohei M.

In: Applied Physics Letters, Vol. 107, No. 13, 132101, 28.09.2015.

Research output: Contribution to journalArticle

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