Abstract
We demonstrate the formation of abrupt phosphorus (P) δ-doping profiles in germanium (Ge) by the insertion of ultra-thin silicon (Si) layers. The Si layers at the δ-doping region significantly suppress the surface segregation of P during the molecular beam epitaxial growth of Ge and high-concentration active P donors are confined within a few nm of the initial doping position. The current-voltage characteristics of the P δ-doped layers with Si insertion show excellent Ohmic behaviors with low enough resistivity for ultra-shallow Ohmic contacts on n-type Ge.
Original language | English |
---|---|
Article number | 132101 |
Journal | Applied Physics Letters |
Volume | 107 |
Issue number | 13 |
DOIs | |
Publication status | Published - 2015 Sept 28 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)