Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium

Michihiro Yamada, Kentarou Sawano, Masashi Uematsu, Kohei M. Itoh

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

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Physics & Astronomy