Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium

Michihiro Yamada, Kentarou Sawano, Masashi Uematsu, Kohei M. Itoh

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Fingerprint Dive into the research topics of 'Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium'. Together they form a unique fingerprint.

Physics & Astronomy