Abstract
We have investigated the surface and bulk passivation technique on large-area multicrystalline silicon solar cells, a large open-circuit voltage has been obtained for cells oxidized to passivate the surface and hydrogen annealed after deposition of silicon nitride film on both surfaces by plasma CVD method (P-SiN) to passivate the bulk. The texture surface like pyramid structure on multicrystalline silicon surface has been obtained uniformly using reactive ion etching (RIE) method. Combining these RIE method and passivation schemes, the conversion efficiency of 17.1% is obtained on 15 cm × 15 cm multicrystalline silicon solar cell. Phosphorus diffusion, BSF formation, passivation technique and contact metallization for low-cost process sequences are also described in this paper.
| Original language | English |
|---|---|
| Pages (from-to) | 219-228 |
| Number of pages | 10 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 48 |
| Issue number | 1-4 |
| Publication status | Published - 1997 Nov |
| Externally published | Yes |
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Keywords
- Multicrystalline silicon
- Solar cells
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
Cite this
Surface and bulk-passivated large area multicrystalline silicon solar cells. / Fukui, K.; Okada, K.; Inomata, Y.; Takahashi, H.; Fujii, S.; Fukawa, Y.; Shirasawa, K.
In: Solar Energy Materials and Solar Cells, Vol. 48, No. 1-4, 11.1997, p. 219-228.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Surface and bulk-passivated large area multicrystalline silicon solar cells
AU - Fukui, K.
AU - Okada, K.
AU - Inomata, Y.
AU - Takahashi, H.
AU - Fujii, S.
AU - Fukawa, Y.
AU - Shirasawa, K.
PY - 1997/11
Y1 - 1997/11
N2 - We have investigated the surface and bulk passivation technique on large-area multicrystalline silicon solar cells, a large open-circuit voltage has been obtained for cells oxidized to passivate the surface and hydrogen annealed after deposition of silicon nitride film on both surfaces by plasma CVD method (P-SiN) to passivate the bulk. The texture surface like pyramid structure on multicrystalline silicon surface has been obtained uniformly using reactive ion etching (RIE) method. Combining these RIE method and passivation schemes, the conversion efficiency of 17.1% is obtained on 15 cm × 15 cm multicrystalline silicon solar cell. Phosphorus diffusion, BSF formation, passivation technique and contact metallization for low-cost process sequences are also described in this paper.
AB - We have investigated the surface and bulk passivation technique on large-area multicrystalline silicon solar cells, a large open-circuit voltage has been obtained for cells oxidized to passivate the surface and hydrogen annealed after deposition of silicon nitride film on both surfaces by plasma CVD method (P-SiN) to passivate the bulk. The texture surface like pyramid structure on multicrystalline silicon surface has been obtained uniformly using reactive ion etching (RIE) method. Combining these RIE method and passivation schemes, the conversion efficiency of 17.1% is obtained on 15 cm × 15 cm multicrystalline silicon solar cell. Phosphorus diffusion, BSF formation, passivation technique and contact metallization for low-cost process sequences are also described in this paper.
KW - Multicrystalline silicon
KW - Solar cells
UR - http://www.scopus.com/inward/record.url?scp=0031275549&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031275549&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0031275549
VL - 48
SP - 219
EP - 228
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
IS - 1-4
ER -