Surface Modification of Polytetrafluoroethylene with ARF Excimer Laser Irradiation

Shingo inoue, Takeo Fujii, Voshiaki Ueno, Fumihiko Kannari

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Crystalline thin films of polytetrafluoroethylene were deposited on Si (100) wafers by F2 laser (157 nm) ablation. X-ray photoemission spectra indicated that the composition of deposited films was similar to the source material. The surface morphology of films deposited at room temperature contained numerous fibrous structures in size of 100~400 nm, but they were smoothed out at elevated wafer temperature of ~370 K. The refractive index was ~1.35 at 633 nm. Ionized fragments in the ablation plume were measured by a Faraday cup assembly, but their effect on the deposited films was not observed at the present ionization ratio.

Original languageEnglish
Pages (from-to)389-396
Number of pages8
JournalJournal of Photopolymer Science and Technology
Volume7
Issue number2
DOIs
Publication statusPublished - 1994

Fingerprint

Polytetrafluoroethylene
Excimer lasers
Laser beam effects
Polytetrafluoroethylenes
Surface treatment
Ablation
Photoemission
Ionization
Surface morphology
Refractive index
Crystalline materials
X rays
Thin films
Temperature
Lasers
Chemical analysis

ASJC Scopus subject areas

  • Polymers and Plastics
  • Organic Chemistry
  • Materials Chemistry

Cite this

Surface Modification of Polytetrafluoroethylene with ARF Excimer Laser Irradiation. / inoue, Shingo; Fujii, Takeo; Ueno, Voshiaki; Kannari, Fumihiko.

In: Journal of Photopolymer Science and Technology, Vol. 7, No. 2, 1994, p. 389-396.

Research output: Contribution to journalArticle

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