TY - JOUR
T1 - Surface Modification of Polytetrafluoroethylene with ARF Excimer Laser Irradiation
AU - inoue, Shingo
AU - Fujii, Takeo
AU - Ueno, Voshiaki
AU - kannari, Fumihiko
PY - 1994
Y1 - 1994
N2 - Crystalline thin films of polytetrafluoroethylene were deposited on Si (100) wafers by F2 laser (157 nm) ablation. X-ray photoemission spectra indicated that the composition of deposited films was similar to the source material. The surface morphology of films deposited at room temperature contained numerous fibrous structures in size of 100~400 nm, but they were smoothed out at elevated wafer temperature of ~370 K. The refractive index was ~1.35 at 633 nm. Ionized fragments in the ablation plume were measured by a Faraday cup assembly, but their effect on the deposited films was not observed at the present ionization ratio.
AB - Crystalline thin films of polytetrafluoroethylene were deposited on Si (100) wafers by F2 laser (157 nm) ablation. X-ray photoemission spectra indicated that the composition of deposited films was similar to the source material. The surface morphology of films deposited at room temperature contained numerous fibrous structures in size of 100~400 nm, but they were smoothed out at elevated wafer temperature of ~370 K. The refractive index was ~1.35 at 633 nm. Ionized fragments in the ablation plume were measured by a Faraday cup assembly, but their effect on the deposited films was not observed at the present ionization ratio.
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U2 - 10.2494/photopolymer.7.389
DO - 10.2494/photopolymer.7.389
M3 - Article
AN - SCOPUS:85024312461
SN - 0914-9244
VL - 7
SP - 389
EP - 396
JO - Journal of Photopolymer Science and Technology
JF - Journal of Photopolymer Science and Technology
IS - 2
ER -