Switching characteristics in the ferroelectric organic molecular memories

H. Uemura, S. Horie, Kei Noda, S. Kuwajima, K. Ishida, T. Horiuchi, K. Matsushige

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Organic molecular memories are expected to become one of the essential key devices in the next-generation flexible digital instruments, and in this paper a novel non-volatile organic memory will be introduced. It is shown that the polarization switching characteristics in the ferroelectric films of vinylidene fluoride (VDF) oligomer and P(VDF/TrFE) copolymer change with their structural factors such as crystallinity and chain length of the materials, and the switching time becomes shorter and shorter with increasing applied electric field and reaches in the order of nano-second. Moreover, the possibilities of the application of such thin organic ferroelectric films to an infrared image sensor as well as the creation of the ultra high-density molecular memory by utilizing recent scanning probe microscopy (SPM) technique will be discussed.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages148-149
Number of pages2
Volume1
DOIs
Publication statusPublished - 2006
Externally publishedYes
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

Fingerprint

Ferroelectric materials
Ferroelectric films
Data storage equipment
Digital instruments
Scanning probe microscopy
Chain length
Oligomers
Image sensors
Copolymers
Electric fields
Polarization
Infrared radiation
1,1-difluoroethylene

Keywords

  • Molecular memory
  • Organic ferroelectric film

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Uemura, H., Horie, S., Noda, K., Kuwajima, S., Ishida, K., Horiuchi, T., & Matsushige, K. (2006). Switching characteristics in the ferroelectric organic molecular memories. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (Vol. 1, pp. 148-149). [4388722] https://doi.org/10.1109/NMDC.2006.4388722

Switching characteristics in the ferroelectric organic molecular memories. / Uemura, H.; Horie, S.; Noda, Kei; Kuwajima, S.; Ishida, K.; Horiuchi, T.; Matsushige, K.

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. p. 148-149 4388722.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Uemura, H, Horie, S, Noda, K, Kuwajima, S, Ishida, K, Horiuchi, T & Matsushige, K 2006, Switching characteristics in the ferroelectric organic molecular memories. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. vol. 1, 4388722, pp. 148-149, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388722
Uemura H, Horie S, Noda K, Kuwajima S, Ishida K, Horiuchi T et al. Switching characteristics in the ferroelectric organic molecular memories. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1. 2006. p. 148-149. 4388722 https://doi.org/10.1109/NMDC.2006.4388722
Uemura, H. ; Horie, S. ; Noda, Kei ; Kuwajima, S. ; Ishida, K. ; Horiuchi, T. ; Matsushige, K. / Switching characteristics in the ferroelectric organic molecular memories. 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. pp. 148-149
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