TY - GEN
T1 - Switching of the Optical Properties of Ge2Sb2Te5 Phase Change Material in the Terahertz Frequency Region
AU - Makino, Kotaro
AU - Kato, Kosaku
AU - Saito, Yuta
AU - Fons, Paul
AU - Kolobov, Alexander V.
AU - Tominaga, Junji
AU - Nakano, Takashi
AU - Nakajima, Makoto
N1 - Funding Information:
ACKNOWLEDGEMENT This work was supported in part by JSPS (16H03886, 18K14156, 18H04515).
PY - 2019/9
Y1 - 2019/9
N2 - A reversible insulator-to-metal transition in phase change materials is expected to be usuful for a variety of optoelectronic devices including terahertz (THz) applications. Here, we report on the phase-dependent changes in the optical properties of the thin films of Ge2Sb2Te5 (GST) phase change material. THz time domain spectroscopy measurements were carried out for amorphous and crystalline samples obtained by annealing at different temperatures and the optical properties of the GST films in the THz frequency range were characterized. It was found that the amorphous GST film was almost transparent to THz radiation due to the of absence of free carriers. On the other hand, the crystalline GST films were found to absorb THz radiation depending on the annealing temperature. The index of refraction was found to enhance with increasing annealing temperature. These properties are promising for THz wave devices such as programable amplitude modulator or plasmonic devices.
AB - A reversible insulator-to-metal transition in phase change materials is expected to be usuful for a variety of optoelectronic devices including terahertz (THz) applications. Here, we report on the phase-dependent changes in the optical properties of the thin films of Ge2Sb2Te5 (GST) phase change material. THz time domain spectroscopy measurements were carried out for amorphous and crystalline samples obtained by annealing at different temperatures and the optical properties of the GST films in the THz frequency range were characterized. It was found that the amorphous GST film was almost transparent to THz radiation due to the of absence of free carriers. On the other hand, the crystalline GST films were found to absorb THz radiation depending on the annealing temperature. The index of refraction was found to enhance with increasing annealing temperature. These properties are promising for THz wave devices such as programable amplitude modulator or plasmonic devices.
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U2 - 10.1109/IRMMW-THz.2019.8873769
DO - 10.1109/IRMMW-THz.2019.8873769
M3 - Conference contribution
AN - SCOPUS:85074686715
T3 - International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
BT - IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves
PB - IEEE Computer Society
T2 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019
Y2 - 1 September 2019 through 6 September 2019
ER -