TEMPERATURE DEPENDENCE OF HALL FACTOR IN LOW-COMPENSATED n-TYPE SILICON.

Eiji Ohta, Makoto Sakata

Research output: Chapter in Book/Report/Conference proceedingChapter

26 Citations (Scopus)

Abstract

The Hall coefficient and hall mobility have been analyzed in order to determine the temperature dependence of the Hall factor for a series of low-compensated n-type silicon samples doped with phosphorus. Hall mobility and the Hall factor are numerically calculated by employing models which assume two different intervalley phonons, in addition to isotropic or anisotropic intravalley acoustic scattering and ionized-impurity scattering. The temperature dependence of the Hall factor calculated from the models is almost independent of the donor concentration. A model of two intervalley phonons of 740 K (2. 5) and 190 K (0. 15) characteristic temperatures (relative coupling strengths) presents a good description of the Hall mobility results, and reveals the temperature dependence of the Hall factor, which agrees with the experimental results up to 300 K.

Original languageEnglish
Title of host publicationJpn J Appl Phys
Pages1795-1804
Number of pages10
Volume17
Edition10
Publication statusPublished - 1978 Oct

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Hall mobility
Phonons
Scattering
Temperature
Phosphorus
Acoustics
Impurities
Silicon

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ohta, E., & Sakata, M. (1978). TEMPERATURE DEPENDENCE OF HALL FACTOR IN LOW-COMPENSATED n-TYPE SILICON. In Jpn J Appl Phys (10 ed., Vol. 17, pp. 1795-1804)

TEMPERATURE DEPENDENCE OF HALL FACTOR IN LOW-COMPENSATED n-TYPE SILICON. / Ohta, Eiji; Sakata, Makoto.

Jpn J Appl Phys. Vol. 17 10. ed. 1978. p. 1795-1804.

Research output: Chapter in Book/Report/Conference proceedingChapter

Ohta, E & Sakata, M 1978, TEMPERATURE DEPENDENCE OF HALL FACTOR IN LOW-COMPENSATED n-TYPE SILICON. in Jpn J Appl Phys. 10 edn, vol. 17, pp. 1795-1804.
Ohta E, Sakata M. TEMPERATURE DEPENDENCE OF HALL FACTOR IN LOW-COMPENSATED n-TYPE SILICON. In Jpn J Appl Phys. 10 ed. Vol. 17. 1978. p. 1795-1804
Ohta, Eiji ; Sakata, Makoto. / TEMPERATURE DEPENDENCE OF HALL FACTOR IN LOW-COMPENSATED n-TYPE SILICON. Jpn J Appl Phys. Vol. 17 10. ed. 1978. pp. 1795-1804
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