Temperature-dependent current injection and lasing in T-shaped quantum-wire laser diodes with perpendicular p - and n -doping layers

Makoto Okano, Shu Man Liu, Toshiyuki Ihara, Hirotake Itoh, Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, Kenneth West, Oana Malis

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The authors measured the temperature dependence of the lasing properties of current-injection T-shaped GaAsAlGaAs quantum-wire (T-wire) lasers with perpendicular p - and n -doping layers. The T-wire lasers with high-reflectivity coatings on both cleaved facets achieved continuous-wave single-mode operation between 5 and 110 K. The lowest threshold current was 2.1 mA at 100 K. The temperature dependences of differential quantum efficiency and threshold current were attributed mainly to that of current-injection efficiency.

Original languageEnglish
Article number091108
JournalApplied Physics Letters
Issue number9
Publication statusPublished - 2007 Mar 9
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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