Temperature variation of nonradiative carrier recombination processes in high-quality CuGaSe2 thin films grown by molecular beam epitaxy

Kenji Yoshino; Daisuke Maruoka; Tetsuo Ikari; Paul J. Fons; Shigeru Niki; Akimasa Yamada

doi:10.1063/1.126943

Temperature variation of nonradiative carrier recombination processes in high-quality CuGaSe₂ thin films grown by molecular beam epitaxy

Kenji Yoshino, Daisuke Maruoka, Tetsuo Ikari, Paul J. Fons, Shigeru Niki, Akimasa Yamada

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The piezoelectric photoacoustic (PPA) measurements tor Cu-rich CuGaSe₂(CGS)/GaAs(001) epitaxial layer were carried out between liquid helium and room temperatures. The band gap energies of CGS (A, B, and C bands) were measured to be 1.73, 1.83, and 2.04 eV at liquid nitrogen temperature, respectively. The A band was clearly obtained from 5 to 300 K, and the temperature dependence of the peak energy was fitted with the modified Manoogian-Woolley equation. PPA signals for CGS/GaAs (001) epitaxial layers were obtained between liquid helium and room temperature.

Original language	English
Pages (from-to)	259-261
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	2
DOIs	https://doi.org/10.1063/1.126943
Publication status	Published - 2000 Jul 10
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Temperature variation of nonradiative carrier recombination processes in high-quality CuGaSe2 thin films grown by molecular beam epitaxy",

abstract = "The piezoelectric photoacoustic (PPA) measurements tor Cu-rich CuGaSe2(CGS)/GaAs(001) epitaxial layer were carried out between liquid helium and room temperatures. The band gap energies of CGS (A, B, and C bands) were measured to be 1.73, 1.83, and 2.04 eV at liquid nitrogen temperature, respectively. The A band was clearly obtained from 5 to 300 K, and the temperature dependence of the peak energy was fitted with the modified Manoogian-Woolley equation. PPA signals for CGS/GaAs (001) epitaxial layers were obtained between liquid helium and room temperature.",

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T1 - Temperature variation of nonradiative carrier recombination processes in high-quality CuGaSe2 thin films grown by molecular beam epitaxy

AU - Yoshino, Kenji

AU - Maruoka, Daisuke

AU - Ikari, Tetsuo

AU - Fons, Paul J.

AU - Niki, Shigeru

AU - Yamada, Akimasa

PY - 2000/7/10

Y1 - 2000/7/10

N2 - The piezoelectric photoacoustic (PPA) measurements tor Cu-rich CuGaSe2(CGS)/GaAs(001) epitaxial layer were carried out between liquid helium and room temperatures. The band gap energies of CGS (A, B, and C bands) were measured to be 1.73, 1.83, and 2.04 eV at liquid nitrogen temperature, respectively. The A band was clearly obtained from 5 to 300 K, and the temperature dependence of the peak energy was fitted with the modified Manoogian-Woolley equation. PPA signals for CGS/GaAs (001) epitaxial layers were obtained between liquid helium and room temperature.

AB - The piezoelectric photoacoustic (PPA) measurements tor Cu-rich CuGaSe2(CGS)/GaAs(001) epitaxial layer were carried out between liquid helium and room temperatures. The band gap energies of CGS (A, B, and C bands) were measured to be 1.73, 1.83, and 2.04 eV at liquid nitrogen temperature, respectively. The A band was clearly obtained from 5 to 300 K, and the temperature dependence of the peak energy was fitted with the modified Manoogian-Woolley equation. PPA signals for CGS/GaAs (001) epitaxial layers were obtained between liquid helium and room temperature.

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Temperature variation of nonradiative carrier recombination processes in high-quality CuGaSe₂ thin films grown by molecular beam epitaxy

Abstract

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