Temperature variation of nonradiative carrier recombination processes in high-quality CuGaSe2 thin films grown by molecular beam epitaxy

Kenji Yoshino, Daisuke Maruoka, Tetsuo Ikari, Paul J. Fons, Shigeru Niki, Akimasa Yamada

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The piezoelectric photoacoustic (PPA) measurements tor Cu-rich CuGaSe2(CGS)/GaAs(001) epitaxial layer were carried out between liquid helium and room temperatures. The band gap energies of CGS (A, B, and C bands) were measured to be 1.73, 1.83, and 2.04 eV at liquid nitrogen temperature, respectively. The A band was clearly obtained from 5 to 300 K, and the temperature dependence of the peak energy was fitted with the modified Manoogian-Woolley equation. PPA signals for CGS/GaAs (001) epitaxial layers were obtained between liquid helium and room temperature.

Original languageEnglish
Pages (from-to)259-261
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number2
DOIs
Publication statusPublished - 2000 Jul 10
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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