Abstract
We experimentally show that continuously changing polarity of an ellipticallypolarizedterahertz electric-field can be used to image a height profile of semiconductors, metals, and their hybrid samples with a depth resolution of ̃1 μm.
| Original language | English |
|---|---|
| Title of host publication | CLEO |
| Subtitle of host publication | Science and Innovations, CLEO_SI 2012 |
| Publisher | Optical Society of America (OSA) |
| Pages | CTu3B.7 |
| ISBN (Print) | 9781557529435 |
| DOIs | |
| Publication status | Published - 2012 |
| Event | CLEO: Science and Innovations, CLEO_SI 2012 - San Jose, CA, United States Duration: 2012 May 6 → 2012 May 11 |
Publication series
| Name | CLEO: Science and Innovations, CLEO_SI 2012 |
|---|
Other
| Other | CLEO: Science and Innovations, CLEO_SI 2012 |
|---|---|
| Country | United States |
| City | San Jose, CA |
| Period | 12/5/6 → 12/5/11 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
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Cite this
Yasumatsu, N., & Watanabe, S. (2012). Terahertz profilometer by time-domain polarimetry. In CLEO: Science and Innovations, CLEO_SI 2012 (pp. CTu3B.7). (CLEO: Science and Innovations, CLEO_SI 2012). Optical Society of America (OSA). https://doi.org/10.1364/cleo_si.2012.ctu3b.7