Abstract
We experimentally show that continuously changing polarity of an ellipticallypolarizedterahertz electric-field can be used to image a height profile of semiconductors, metals, and their hybrid samples with a depth resolution of ̃1 μm.
| Original language | English |
|---|---|
| Title of host publication | CLEO: Science and Innovations, CLEO_SI 2012 |
| Publication status | Published - 2012 |
| Event | CLEO: Science and Innovations, CLEO_SI 2012 - San Jose, CA, United States Duration: 2012 May 6 → 2012 May 11 |
Other
| Other | CLEO: Science and Innovations, CLEO_SI 2012 |
|---|---|
| Country | United States |
| City | San Jose, CA |
| Period | 12/5/6 → 12/5/11 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
Terahertz profilometer by time-domain polarimetry. / Yasumatsu, Naoya; Watanabe, Shinichi.
CLEO: Science and Innovations, CLEO_SI 2012. 2012.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Terahertz profilometer by time-domain polarimetry
AU - Yasumatsu, Naoya
AU - Watanabe, Shinichi
PY - 2012
Y1 - 2012
N2 - We experimentally show that continuously changing polarity of an ellipticallypolarizedterahertz electric-field can be used to image a height profile of semiconductors, metals, and their hybrid samples with a depth resolution of ̃1 μm.
AB - We experimentally show that continuously changing polarity of an ellipticallypolarizedterahertz electric-field can be used to image a height profile of semiconductors, metals, and their hybrid samples with a depth resolution of ̃1 μm.
UR - http://www.scopus.com/inward/record.url?scp=84890712452&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84890712452&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84890712452
SN - 9781557529435
BT - CLEO: Science and Innovations, CLEO_SI 2012
ER -