Ternary nitride films synthesized by cathodic arc method

H. Hasegawa; M. Kawate; A. K. Hashimoto; T. Suzuki

doi:10.1016/B978-008044504-5/50090-8

Ternary nitride films synthesized by cathodic arc method

H. Hasegawa, M. Kawate, A. K. Hashimoto, T. Suzuki

Department of Mechanical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Chapter

2 Citations (Scopus)

Abstract

This chapter discusses the maximum hardness of ternary nitride films with particular 'x' value based on the phase transition, analyzed by the X-ray diffraction method and transmission electron microscopy. Changes in microstructures and corresponding physical properties of ternary nitride films and Zr_l-xAl_xN are focused on micro-hardness with respect to different 'x' value. The crystal structure and lattice parameter of ternary films change with 'x' value and their physical properties correspondingly change as well. It is well known that the metastable PVD films is developed by incorporating second metals to binary nitride films in aims of gaining excellent properties. It is reported that the Ti_1-x Al_xN films are alternative to TiN due to higher hardness and better cutting performance. The solubility of AlN to TiN is investigated by several researches using the X-ray diffraction method.

Original language	English
Title of host publication	Novel Materials Processing by Advanced Electromagnetic Energy Sources
Publisher	Elsevier
Pages	437-440
Number of pages	4
ISBN (Print)	9780080445045
DOIs	https://doi.org/10.1016/B978-008044504-5/50090-8
Publication status	Published - 2005

ASJC Scopus subject areas

Energy(all)

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10.1016/B978-008044504-5/50090-8

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title = "Ternary nitride films synthesized by cathodic arc method",

abstract = "This chapter discusses the maximum hardness of ternary nitride films with particular 'x' value based on the phase transition, analyzed by the X-ray diffraction method and transmission electron microscopy. Changes in microstructures and corresponding physical properties of ternary nitride films and Zrl-xAlxN are focused on micro-hardness with respect to different 'x' value. The crystal structure and lattice parameter of ternary films change with 'x' value and their physical properties correspondingly change as well. It is well known that the metastable PVD films is developed by incorporating second metals to binary nitride films in aims of gaining excellent properties. It is reported that the Ti1-x AlxN films are alternative to TiN due to higher hardness and better cutting performance. The solubility of AlN to TiN is investigated by several researches using the X-ray diffraction method.",

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T1 - Ternary nitride films synthesized by cathodic arc method

AU - Hasegawa, H.

AU - Kawate, M.

AU - Hashimoto, A. K.

AU - Suzuki, T.

PY - 2005

Y1 - 2005

N2 - This chapter discusses the maximum hardness of ternary nitride films with particular 'x' value based on the phase transition, analyzed by the X-ray diffraction method and transmission electron microscopy. Changes in microstructures and corresponding physical properties of ternary nitride films and Zrl-xAlxN are focused on micro-hardness with respect to different 'x' value. The crystal structure and lattice parameter of ternary films change with 'x' value and their physical properties correspondingly change as well. It is well known that the metastable PVD films is developed by incorporating second metals to binary nitride films in aims of gaining excellent properties. It is reported that the Ti1-x AlxN films are alternative to TiN due to higher hardness and better cutting performance. The solubility of AlN to TiN is investigated by several researches using the X-ray diffraction method.

AB - This chapter discusses the maximum hardness of ternary nitride films with particular 'x' value based on the phase transition, analyzed by the X-ray diffraction method and transmission electron microscopy. Changes in microstructures and corresponding physical properties of ternary nitride films and Zrl-xAlxN are focused on micro-hardness with respect to different 'x' value. The crystal structure and lattice parameter of ternary films change with 'x' value and their physical properties correspondingly change as well. It is well known that the metastable PVD films is developed by incorporating second metals to binary nitride films in aims of gaining excellent properties. It is reported that the Ti1-x AlxN films are alternative to TiN due to higher hardness and better cutting performance. The solubility of AlN to TiN is investigated by several researches using the X-ray diffraction method.

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BT - Novel Materials Processing by Advanced Electromagnetic Energy Sources

PB - Elsevier

ER -

Ternary nitride films synthesized by cathodic arc method

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