Tetrahedral shaped recess channel HEMT with a floating quantum dot gate

M. Shima, Y. Sakuma, T. Futatsugi, Yuji Awano, N. Yokoyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

For the first time in the world, we achieved, at 77 K, a transistor and memory operation of a FET structure which was grown in a Tetrahedral-shaped recess (TSR-HEMT). This TSR-HEMT memory has a floating quantum dot (QD) gate at the bottom of the recess. Owing to the particular shape of the tetrahedral-shaped recess (TSR) structure, we were able to demonstrate that the charging of the floating QD gate can modulate the potential energy near the bottom by an amount of 9 meV and thus effectively modify the current. The measured I-V characteristics of the memory device clearly indicated a hysteresis at the sub-threshold gate bias region and a low power operation requiring write/erase voltages around only IV. The measured retention characteristics also showed that the device had a retention time of several minutes even at 100 K. We think that the TSR-HEMT is a promising structure for the use in future nanometer-scale microelectronics.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherIEEE
Pages437-440
Number of pages4
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1998 Dec 61998 Dec 9

Other

OtherProceedings of the 1998 IEEE International Electron Devices Meeting
CitySan Francisco, CA, USA
Period98/12/698/12/9

Fingerprint

High electron mobility transistors
Semiconductor quantum dots
Data storage equipment
Field effect transistors
Potential energy
Microelectronics
Hysteresis
Transistors
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Shima, M., Sakuma, Y., Futatsugi, T., Awano, Y., & Yokoyama, N. (1998). Tetrahedral shaped recess channel HEMT with a floating quantum dot gate. In Anon (Ed.), Technical Digest - International Electron Devices Meeting (pp. 437-440). IEEE.

Tetrahedral shaped recess channel HEMT with a floating quantum dot gate. / Shima, M.; Sakuma, Y.; Futatsugi, T.; Awano, Yuji; Yokoyama, N.

Technical Digest - International Electron Devices Meeting. ed. / Anon. IEEE, 1998. p. 437-440.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shima, M, Sakuma, Y, Futatsugi, T, Awano, Y & Yokoyama, N 1998, Tetrahedral shaped recess channel HEMT with a floating quantum dot gate. in Anon (ed.), Technical Digest - International Electron Devices Meeting. IEEE, pp. 437-440, Proceedings of the 1998 IEEE International Electron Devices Meeting, San Francisco, CA, USA, 98/12/6.
Shima M, Sakuma Y, Futatsugi T, Awano Y, Yokoyama N. Tetrahedral shaped recess channel HEMT with a floating quantum dot gate. In Anon, editor, Technical Digest - International Electron Devices Meeting. IEEE. 1998. p. 437-440
Shima, M. ; Sakuma, Y. ; Futatsugi, T. ; Awano, Yuji ; Yokoyama, N. / Tetrahedral shaped recess channel HEMT with a floating quantum dot gate. Technical Digest - International Electron Devices Meeting. editor / Anon. IEEE, 1998. pp. 437-440
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