The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2

Shigeto Fukatsu, Tomonori Takahashi, Kohei M Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, Kenji Shiraishi

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The self-diffusion coefficient of Si in thermal oxides (SiO2) formed on semiconductor silicon wafers has been determined with isotope heterostructures, natSiO2/28SiO2, as a function of the partial pressure of oxygen mixed into argon annealing ambient. The natSiO2 layers contain 3.1% of 30Si stable isotopes while the 28SiO2 layers are depleted of 30Si stable isotopes down to 0.003%, and the diffusion depth profiles of 30Si isotopes from the natSiO2 to 28SiO2 layers after thermal annealing have been determined by secondary ion mass spectrometry (SIMS). The Si self-diffusivity is found not to depend on the partial pressure of oxygen within our experimental error of about ±33%.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number12 B
Publication statusPublished - 2003 Dec 15

Fingerprint

Partial pressure
Isotopes
partial pressure
isotopes
Oxygen
oxygen
Annealing
annealing
Secondary ion mass spectrometry
Silicon wafers
secondary ion mass spectrometry
diffusivity
Heterojunctions
Argon
diffusion coefficient
argon
wafers
Semiconductor materials
Oxides
oxides

Keywords

  • Gate Insulator
  • Self-diffusion
  • Silicon dioxide
  • Silicon electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Fukatsu, S., Takahashi, T., Itoh, K. M., Uematsu, M., Fujiwara, A., Kageshima, H., ... Shiraishi, K. (2003). The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2 Japanese Journal of Applied Physics, Part 2: Letters, 42(12 B).

The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2 . / Fukatsu, Shigeto; Takahashi, Tomonori; Itoh, Kohei M; Uematsu, Masashi; Fujiwara, Akira; Kageshima, Hiroyuki; Takahashi, Yasuo; Shiraishi, Kenji.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 42, No. 12 B, 15.12.2003.

Research output: Contribution to journalArticle

Fukatsu, S, Takahashi, T, Itoh, KM, Uematsu, M, Fujiwara, A, Kageshima, H, Takahashi, Y & Shiraishi, K 2003, 'The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2 ', Japanese Journal of Applied Physics, Part 2: Letters, vol. 42, no. 12 B.
Fukatsu, Shigeto ; Takahashi, Tomonori ; Itoh, Kohei M ; Uematsu, Masashi ; Fujiwara, Akira ; Kageshima, Hiroyuki ; Takahashi, Yasuo ; Shiraishi, Kenji. / The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2 In: Japanese Journal of Applied Physics, Part 2: Letters. 2003 ; Vol. 42, No. 12 B.
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