The effect of side traps on ballistic transistor in Kondo regime

Tetsufumi Tanamoto, Ken Uchida, Shinobu Fujita

    Research output: Contribution to journalArticlepeer-review


    The effect of side traps on current and conductance in ballistic transport is calculated using slave-boson mean field theory, particularly when there are electrodes on both sides of a short channel. The depth of the conductance dip, which is due to destructive interference known as the Fano-Kondo effect, depends on the tunneling coupling between the conducting region and the electrodes. The results imply that ballistic devices are sensitive to trap sites.

    Original languageEnglish
    Pages (from-to)2073-2075
    Number of pages3
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Issue number4 B
    Publication statusPublished - 2007 Apr 24


    • Ballistic transistor
    • Fano-Kondo effect
    • Trap

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)


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