The effect of the nitrogen plasma irradiation on ZnO single crystals

H. Maki, N. Ichinose, I. Sakaguchi, N. Ohashi, H. Haneda, J. Tanaka

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

The ZnO (0001) and (0001̄) surfaces irradiated with nitrogen using an electron cyclotron resonance (ECR) gun were studied with X-ray photoelectron spectroscopy (XPS). After annealed at 800°C, N ions remained on the surfaces in four states: i.e. NO, N2, the N species that has excess electrons like NH3 or N2, and the N ions that replaced O ions in ZnO lattice. The surface oxygen could be substituted with N ions that could affect N-doping and the heterogeneous growth of nitride thin films on ZnO.

Original languageEnglish
Pages (from-to)61-64
Number of pages4
JournalKey Engineering Materials
Volume216
Publication statusPublished - 2001 Jan 1
Externally publishedYes
Event20th Electronics Division Meeting of the Ceramic Society of Japan - Kawasaki, Japan
Duration: 2000 Oct 262000 Oct 27

Keywords

  • Doping
  • Electron cyclotron resonance
  • Nitrogen
  • X-ray photoelectron spectroscopy
  • Zinc oxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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