The effect of topographical local charging on the etching of deep-submicron structures in SiO2 as a function of aspect ratio

Jun Matsui, Nobuhiko Nakano, Zoran Lj Petrović, Toshiaki Makabe

Research output: Contribution to journalArticle

79 Citations (Scopus)

Abstract

Physical and electrical influences on plasma etching on the inside of a microtrench in SiO2 were numerically investigated using Monte Carlo simulation of ions and electrons with the aid of surface charge continuity and Poisson's equation. When the aspect ratio is greater than seven, the bottom is charged up to a potential sufficient to prevent the influence of all the incident ions, with a realistic initial energy of 300 eV for SiO2 etching within the period required for monolayer stripping, resulting in etch stop. The cause of etch stop is purely the result of the electrical local charging due to the topography of the trench, and of the initial conditions for incident charged particles. The etch stop caused by a cw plasma will be disorganized or prevented within a short time by the aid of ion-ion plasma in an afterglow phase.

Original languageEnglish
Pages (from-to)883-885
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number7
DOIs
Publication statusPublished - 2001 Feb 12

Fingerprint

charging
aspect ratio
etching
ions
continuity equation
plasma etching
Poisson equation
stripping
afterglows
topography
charged particles
causes
electrons
simulation
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

The effect of topographical local charging on the etching of deep-submicron structures in SiO2 as a function of aspect ratio. / Matsui, Jun; Nakano, Nobuhiko; Petrović, Zoran Lj; Makabe, Toshiaki.

In: Applied Physics Letters, Vol. 78, No. 7, 12.02.2001, p. 883-885.

Research output: Contribution to journalArticle

@article{3ebbeeff3b0242baabf1ff343cf9aa64,
title = "The effect of topographical local charging on the etching of deep-submicron structures in SiO2 as a function of aspect ratio",
abstract = "Physical and electrical influences on plasma etching on the inside of a microtrench in SiO2 were numerically investigated using Monte Carlo simulation of ions and electrons with the aid of surface charge continuity and Poisson's equation. When the aspect ratio is greater than seven, the bottom is charged up to a potential sufficient to prevent the influence of all the incident ions, with a realistic initial energy of 300 eV for SiO2 etching within the period required for monolayer stripping, resulting in etch stop. The cause of etch stop is purely the result of the electrical local charging due to the topography of the trench, and of the initial conditions for incident charged particles. The etch stop caused by a cw plasma will be disorganized or prevented within a short time by the aid of ion-ion plasma in an afterglow phase.",
author = "Jun Matsui and Nobuhiko Nakano and Petrović, {Zoran Lj} and Toshiaki Makabe",
year = "2001",
month = "2",
day = "12",
doi = "10.1063/1.1347021",
language = "English",
volume = "78",
pages = "883--885",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - The effect of topographical local charging on the etching of deep-submicron structures in SiO2 as a function of aspect ratio

AU - Matsui, Jun

AU - Nakano, Nobuhiko

AU - Petrović, Zoran Lj

AU - Makabe, Toshiaki

PY - 2001/2/12

Y1 - 2001/2/12

N2 - Physical and electrical influences on plasma etching on the inside of a microtrench in SiO2 were numerically investigated using Monte Carlo simulation of ions and electrons with the aid of surface charge continuity and Poisson's equation. When the aspect ratio is greater than seven, the bottom is charged up to a potential sufficient to prevent the influence of all the incident ions, with a realistic initial energy of 300 eV for SiO2 etching within the period required for monolayer stripping, resulting in etch stop. The cause of etch stop is purely the result of the electrical local charging due to the topography of the trench, and of the initial conditions for incident charged particles. The etch stop caused by a cw plasma will be disorganized or prevented within a short time by the aid of ion-ion plasma in an afterglow phase.

AB - Physical and electrical influences on plasma etching on the inside of a microtrench in SiO2 were numerically investigated using Monte Carlo simulation of ions and electrons with the aid of surface charge continuity and Poisson's equation. When the aspect ratio is greater than seven, the bottom is charged up to a potential sufficient to prevent the influence of all the incident ions, with a realistic initial energy of 300 eV for SiO2 etching within the period required for monolayer stripping, resulting in etch stop. The cause of etch stop is purely the result of the electrical local charging due to the topography of the trench, and of the initial conditions for incident charged particles. The etch stop caused by a cw plasma will be disorganized or prevented within a short time by the aid of ion-ion plasma in an afterglow phase.

UR - http://www.scopus.com/inward/record.url?scp=0000698240&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000698240&partnerID=8YFLogxK

U2 - 10.1063/1.1347021

DO - 10.1063/1.1347021

M3 - Article

AN - SCOPUS:0000698240

VL - 78

SP - 883

EP - 885

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

ER -