The fabrication of Ni quantum cross devices with a 17nm junction and their current-voltage characteristics

Hideo Kaiju, Kenji Kondo, Akito Ono, Nobuyoshi Kawaguchi, Jonghan Won, Akihiko Hirata, Manabu Ishimaru, Yoshihiko Hirotsu, Akira Ishibashi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Quantum cross (QC) devices which consist of two Ni thin films deposited on polyethylene naphthalate substrates with their edges crossing have been fabricated and their current-voltage characteristics have been investigated. The cross-sectional area between the two Ni electrodes, which was obtained without the use of electron-beam or optical lithography, can be as small as 17nm × 17nm. We have successfully obtained ohmic current-voltage characteristics, which show good agreement with calculation results within the framework of the modified Anderson model. The calculated results also predict a high switching ratio in excess of 100 000:1 for QC devices having the molecule sandwiched between the Ni electrodes. This indicates that QC devices having the molecule can be expected to have potential application in novel switching devices.

Original languageEnglish
Article number015301
JournalNanotechnology
Volume21
Issue number1
DOIs
Publication statusPublished - 2010 Jan 1
Externally publishedYes

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Current voltage characteristics
Fabrication
Electrodes
Molecules
Electron beam lithography
Polyethylene
Photolithography
Polyethylenes
Thin films
Substrates

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

The fabrication of Ni quantum cross devices with a 17nm junction and their current-voltage characteristics. / Kaiju, Hideo; Kondo, Kenji; Ono, Akito; Kawaguchi, Nobuyoshi; Won, Jonghan; Hirata, Akihiko; Ishimaru, Manabu; Hirotsu, Yoshihiko; Ishibashi, Akira.

In: Nanotechnology, Vol. 21, No. 1, 015301, 01.01.2010.

Research output: Contribution to journalArticle

Kaiju, H, Kondo, K, Ono, A, Kawaguchi, N, Won, J, Hirata, A, Ishimaru, M, Hirotsu, Y & Ishibashi, A 2010, 'The fabrication of Ni quantum cross devices with a 17nm junction and their current-voltage characteristics', Nanotechnology, vol. 21, no. 1, 015301. https://doi.org/10.1088/0957-4484/21/1/015301
Kaiju, Hideo ; Kondo, Kenji ; Ono, Akito ; Kawaguchi, Nobuyoshi ; Won, Jonghan ; Hirata, Akihiko ; Ishimaru, Manabu ; Hirotsu, Yoshihiko ; Ishibashi, Akira. / The fabrication of Ni quantum cross devices with a 17nm junction and their current-voltage characteristics. In: Nanotechnology. 2010 ; Vol. 21, No. 1.
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