The first principle computer simulation and real device characteristics of superlattice phase-change memory

J. Tominaga; R. Simpson; P. Fons; A. Kolobov

doi:10.1109/IEDM.2010.5703412

The first principle computer simulation and real device characteristics of superlattice phase-change memory

J. Tominaga, R. Simpson, P. Fons, A. Kolobov

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

This paper presents of atomically controlled Ge-Sb-Te films that enable a suppression of switching energy, and an increase in speed faster than that using the composite films in Set and Reset. The first principle computer simulations using NVT ensemble dynamics and real device fabrication based on the model were carried out. We found that the obtained experimental data are in good agreement with the simulation models, and succeeded in suppressing the Reset energy by less than 10%.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	22.3.1-22.3.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703412
Publication status	Published - 2010 Dec 1
Externally published	Yes
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: 2010 Dec 6 → 2010 Dec 8

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	10/12/6 → 10/12/8

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2010.5703412

Cite this

Tominaga, J., Simpson, R., Fons, P., & Kolobov, A. (2010). The first principle computer simulation and real device characteristics of superlattice phase-change memory. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 22.3.1-22.3.4). [5703412] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703412

The first principle computer simulation and real device characteristics of superlattice phase-change memory. / Tominaga, J.; Simpson, R.; Fons, P. et al.
2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 22.3.1-22.3.4 5703412 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tominaga, J, Simpson, R, Fons, P & Kolobov, A 2010, The first principle computer simulation and real device characteristics of superlattice phase-change memory. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703412, Technical Digest - International Electron Devices Meeting, IEDM, pp. 22.3.1-22.3.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 10/12/6. https://doi.org/10.1109/IEDM.2010.5703412

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The first principle computer simulation and real device characteristics of superlattice phase-change memory

Abstract

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