The first principle computer simulation and real device characteristics of superlattice phase-change memory

J. Tominaga, R. Simpson, P. Fons, A. Kolobov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper presents of atomically controlled Ge-Sb-Te films that enable a suppression of switching energy, and an increase in speed faster than that using the composite films in Set and Reset. The first principle computer simulations using NVT ensemble dynamics and real device fabrication based on the model were carried out. We found that the obtained experimental data are in good agreement with the simulation models, and succeeded in suppressing the Reset energy by less than 10%.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages22.3.1-22.3.4
DOIs
Publication statusPublished - 2010 Dec 1
Externally publishedYes
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 2010 Dec 62010 Dec 8

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period10/12/610/12/8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Tominaga, J., Simpson, R., Fons, P., & Kolobov, A. (2010). The first principle computer simulation and real device characteristics of superlattice phase-change memory. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 22.3.1-22.3.4). [5703412] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703412