The monolithic heterogeneous integration of GaAs PIN photodiode and Si CMOS-based transimpedance amplifier

E. Kume, H. Ishii, T. Itatani, S. Yamanaka, T. Takada, M. Hata, T. Osada, T. Inoue, Y. Matsumoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This article describes a GaAs PIN photodiode was directly grown on a Si substrate in which CMOS-based transimpedance amplifier (TIA) was fabricated using general Si CMOS process. This monolithic integration device was successfully demonstrated.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2014
PublisherOptical Society of American (OSA)
ISBN (Print)9781557529992
Publication statusPublished - 2014 Jan 1
EventCLEO: Science and Innovations, CLEO_SI 2014 - San Jose, CA, United States
Duration: 2014 Jun 82014 Jun 13

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherCLEO: Science and Innovations, CLEO_SI 2014
CountryUnited States
CitySan Jose, CA
Period14/6/814/6/13

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ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Kume, E., Ishii, H., Itatani, T., Yamanaka, S., Takada, T., Hata, M., Osada, T., Inoue, T., & Matsumoto, Y. (2014). The monolithic heterogeneous integration of GaAs PIN photodiode and Si CMOS-based transimpedance amplifier. In CLEO: Science and Innovations, CLEO_SI 2014 (Optics InfoBase Conference Papers). Optical Society of American (OSA).