The monolithic heterogeneous integration of GaAs PIN photodiode and Si CMOS-based transimpedance amplifier

E. Kume, H. Ishii, T. Itatani, S. Yamanaka, T. Takada, M. Hata, T. Osada, T. Inoue, Yoshinori Matsumoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This article describes a GaAs PIN photodiode was directly grown on a Si substrate in which CMOS-based transimpedance amplifier (TIA) was fabricated using general Si CMOS process. This monolithic integration device was successfully demonstrated.

Original languageEnglish
Title of host publication2014 Conference on Lasers and Electro-Optics, CLEO 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume2014-January
Publication statusPublished - 2014
Event2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States
Duration: 2014 Jun 82014 Jun 13

Other

Other2014 Conference on Lasers and Electro-Optics, CLEO 2014
CountryUnited States
CitySan Jose
Period14/6/814/6/13

Fingerprint

Operational amplifiers
Photodiodes
photodiodes
CMOS
amplifiers
Substrates
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Cite this

Kume, E., Ishii, H., Itatani, T., Yamanaka, S., Takada, T., Hata, M., ... Matsumoto, Y. (2014). The monolithic heterogeneous integration of GaAs PIN photodiode and Si CMOS-based transimpedance amplifier. In 2014 Conference on Lasers and Electro-Optics, CLEO 2014 (Vol. 2014-January). [6990001] Institute of Electrical and Electronics Engineers Inc..

The monolithic heterogeneous integration of GaAs PIN photodiode and Si CMOS-based transimpedance amplifier. / Kume, E.; Ishii, H.; Itatani, T.; Yamanaka, S.; Takada, T.; Hata, M.; Osada, T.; Inoue, T.; Matsumoto, Yoshinori.

2014 Conference on Lasers and Electro-Optics, CLEO 2014. Vol. 2014-January Institute of Electrical and Electronics Engineers Inc., 2014. 6990001.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kume, E, Ishii, H, Itatani, T, Yamanaka, S, Takada, T, Hata, M, Osada, T, Inoue, T & Matsumoto, Y 2014, The monolithic heterogeneous integration of GaAs PIN photodiode and Si CMOS-based transimpedance amplifier. in 2014 Conference on Lasers and Electro-Optics, CLEO 2014. vol. 2014-January, 6990001, Institute of Electrical and Electronics Engineers Inc., 2014 Conference on Lasers and Electro-Optics, CLEO 2014, San Jose, United States, 14/6/8.
Kume E, Ishii H, Itatani T, Yamanaka S, Takada T, Hata M et al. The monolithic heterogeneous integration of GaAs PIN photodiode and Si CMOS-based transimpedance amplifier. In 2014 Conference on Lasers and Electro-Optics, CLEO 2014. Vol. 2014-January. Institute of Electrical and Electronics Engineers Inc. 2014. 6990001
Kume, E. ; Ishii, H. ; Itatani, T. ; Yamanaka, S. ; Takada, T. ; Hata, M. ; Osada, T. ; Inoue, T. ; Matsumoto, Yoshinori. / The monolithic heterogeneous integration of GaAs PIN photodiode and Si CMOS-based transimpedance amplifier. 2014 Conference on Lasers and Electro-Optics, CLEO 2014. Vol. 2014-January Institute of Electrical and Electronics Engineers Inc., 2014.
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AU - Takada, T.

AU - Hata, M.

AU - Osada, T.

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