The monolithic heterogeneous integration of GaAs PIN photodiode and Si CMOS-based transimpedance amplifier

E. Kume, H. Ishii, T. Itatani, S. Yamanaka, T. Takada, M. Hata, T. Osada, T. Inoue, Yoshinori Matsumoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This article describes a GaAs PIN photodiode was directly grown on a Si substrate in which CMOS-based transimpedance amplifier (TIA) was fabricated using general Si CMOS process. This monolithic integration device was successfully demonstrated.

Original languageEnglish
Title of host publication2014 Conference on Lasers and Electro-Optics, CLEO 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume2014-January
Publication statusPublished - 2014
Event2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States
Duration: 2014 Jun 82014 Jun 13

Other

Other2014 Conference on Lasers and Electro-Optics, CLEO 2014
CountryUnited States
CitySan Jose
Period14/6/814/6/13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Kume, E., Ishii, H., Itatani, T., Yamanaka, S., Takada, T., Hata, M., Osada, T., Inoue, T., & Matsumoto, Y. (2014). The monolithic heterogeneous integration of GaAs PIN photodiode and Si CMOS-based transimpedance amplifier. In 2014 Conference on Lasers and Electro-Optics, CLEO 2014 (Vol. 2014-January). [6990001] Institute of Electrical and Electronics Engineers Inc..