The order-disorder transition in GeTe: Views from different length-scales

T. Matsunaga, P. Fons, A. V. Kolobov, J. Tominaga, N. Yamada

Research output: Contribution to journalArticlepeer-review

60 Citations (Scopus)


GeTe is a narrow band gap semiconductor that undergoes a ferroelectric-to-paraelectric phase transition at ∼705 K. While earlier studies of average structure using Bragg diffraction concluded that the transition was displacive, structural probing of short and intermediate order shows evidence for an order-disorder transition. Here, we report and contrast the structure on different length scales with temperature using a radial distribution function analysis obtained from x-ray based total scattering and show that the order-disorder model is consistent with experiment.

Original languageEnglish
Article number231907
JournalApplied Physics Letters
Issue number23
Publication statusPublished - 2011 Dec 5
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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