The order-disorder transition in GeTe: Views from different length-scales

T. Matsunaga; P. Fons; A. V. Kolobov; J. Tominaga; N. Yamada

doi:10.1063/1.3665067

The order-disorder transition in GeTe: Views from different length-scales

T. Matsunaga, P. Fons, A. V. Kolobov, J. Tominaga, N. Yamada

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

GeTe is a narrow band gap semiconductor that undergoes a ferroelectric-to-paraelectric phase transition at ∼705 K. While earlier studies of average structure using Bragg diffraction concluded that the transition was displacive, structural probing of short and intermediate order shows evidence for an order-disorder transition. Here, we report and contrast the structure on different length scales with temperature using a radial distribution function analysis obtained from x-ray based total scattering and show that the order-disorder model is consistent with experiment.

Original language	English
Article number	231907
Journal	Applied Physics Letters
Volume	99
Issue number	23
DOIs	https://doi.org/10.1063/1.3665067
Publication status	Published - 2011 Dec 5
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "GeTe is a narrow band gap semiconductor that undergoes a ferroelectric-to-paraelectric phase transition at ∼705 K. While earlier studies of average structure using Bragg diffraction concluded that the transition was displacive, structural probing of short and intermediate order shows evidence for an order-disorder transition. Here, we report and contrast the structure on different length scales with temperature using a radial distribution function analysis obtained from x-ray based total scattering and show that the order-disorder model is consistent with experiment.",

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AU - Matsunaga, T.

AU - Fons, P.

AU - Kolobov, A. V.

AU - Tominaga, J.

AU - Yamada, N.

PY - 2011/12/5

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N2 - GeTe is a narrow band gap semiconductor that undergoes a ferroelectric-to-paraelectric phase transition at ∼705 K. While earlier studies of average structure using Bragg diffraction concluded that the transition was displacive, structural probing of short and intermediate order shows evidence for an order-disorder transition. Here, we report and contrast the structure on different length scales with temperature using a radial distribution function analysis obtained from x-ray based total scattering and show that the order-disorder model is consistent with experiment.

AB - GeTe is a narrow band gap semiconductor that undergoes a ferroelectric-to-paraelectric phase transition at ∼705 K. While earlier studies of average structure using Bragg diffraction concluded that the transition was displacive, structural probing of short and intermediate order shows evidence for an order-disorder transition. Here, we report and contrast the structure on different length scales with temperature using a radial distribution function analysis obtained from x-ray based total scattering and show that the order-disorder model is consistent with experiment.

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The order-disorder transition in GeTe: Views from different length-scales

Abstract

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