Theoretical calculation of the electron Hall mobility in n-type 4H- and 6H-SiC

Hisaomi Iwata, Kohei M. Itoh

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

We report on the theoretical calculation of the electron Hall mobility in nitrogen doped n-type 4H- and 6H-SiC as a function of temperature, net-doping concentration ([ND]-[NA]), and compensation ratio ([NA]/[ND]). The electron Hall mobility is found for two temperatures, T = 77 K and 300 K, covering a wide range of the net-doping concentration (1014-1019[cm-3]) and the compensation ratio (0-0.6).

Original languageEnglish
Pages (from-to)I/-
JournalMaterials Science Forum
Volume338
Publication statusPublished - 2000 Jan 1
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: 1999 Oct 101999 Oct 15

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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