Theoretical calculation of the electron Hall mobility in n-type 4H- and 6H-SiC

Hisaomi Iwata; Kohei M. Itoh

Theoretical calculation of the electron Hall mobility in n-type 4H- and 6H-SiC

Hisaomi Iwata, Kohei M. Itoh

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

We report on the theoretical calculation of the electron Hall mobility in nitrogen doped n-type 4H- and 6H-SiC as a function of temperature, net-doping concentration ([N_D]-[N_A]), and compensation ratio ([N_A]/[N_D]). The electron Hall mobility is found for two temperatures, T = 77 K and 300 K, covering a wide range of the net-doping concentration (10¹⁴-10¹⁹[cm^-3]) and the compensation ratio (0-0.6).

Original language	English
Pages (from-to)	I/-
Journal	Materials Science Forum
Volume	338
Publication status	Published - 2000 Jan 1
Event	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: 1999 Oct 10 → 1999 Oct 15

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Theoretical calculation of the electron Hall mobility in n-type 4H- and 6H-SiC",

abstract = "We report on the theoretical calculation of the electron Hall mobility in nitrogen doped n-type 4H- and 6H-SiC as a function of temperature, net-doping concentration ([ND]-[NA]), and compensation ratio ([NA]/[ND]). The electron Hall mobility is found for two temperatures, T = 77 K and 300 K, covering a wide range of the net-doping concentration (1014-1019[cm-3]) and the compensation ratio (0-0.6).",

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year = "2000",

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language = "English",

volume = "338",

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journal = "Materials Science Forum",

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note = "ICSCRM '99: The International Conference on Silicon Carbide and Related Materials ; Conference date: 10-10-1999 Through 15-10-1999",

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T1 - Theoretical calculation of the electron Hall mobility in n-type 4H- and 6H-SiC

AU - Iwata, Hisaomi

AU - Itoh, Kohei M.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - We report on the theoretical calculation of the electron Hall mobility in nitrogen doped n-type 4H- and 6H-SiC as a function of temperature, net-doping concentration ([ND]-[NA]), and compensation ratio ([NA]/[ND]). The electron Hall mobility is found for two temperatures, T = 77 K and 300 K, covering a wide range of the net-doping concentration (1014-1019[cm-3]) and the compensation ratio (0-0.6).

AB - We report on the theoretical calculation of the electron Hall mobility in nitrogen doped n-type 4H- and 6H-SiC as a function of temperature, net-doping concentration ([ND]-[NA]), and compensation ratio ([NA]/[ND]). The electron Hall mobility is found for two temperatures, T = 77 K and 300 K, covering a wide range of the net-doping concentration (1014-1019[cm-3]) and the compensation ratio (0-0.6).

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M3 - Conference article

AN - SCOPUS:12944301123

SN - 0255-5476

VL - 338

SP - I/-

JO - Materials Science Forum

JF - Materials Science Forum

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -

Theoretical calculation of the electron Hall mobility in n-type 4H- and 6H-SiC

Abstract

ASJC Scopus subject areas

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