Theoretical calculation of the electron Hall mobility in n-type 4H- and 6H-SiC

Hisaomi Iwata, Kohei M Itoh

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Citations (Scopus)

Abstract

We report on the theoretical calculation of the electron Hall mobility in nitrogen doped n-type 4H- and 6H-SiC as a function of temperature, net-doping concentration ([ND]-[NA]), and compensation ratio ([NA]/[ND]). The electron Hall mobility is found for two temperatures, T = 77 K and 300 K, covering a wide range of the net-doping concentration (1014-1019[cm-3]) and the compensation ratio (0-0.6).

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ Ltd
Volume338
Publication statusPublished - 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: 1999 Oct 101999 Oct 15

Other

OtherICSCRM '99: The International Conference on Silicon Carbide and Related Materials
CityResearch Triangle Park, NC, USA
Period99/10/1099/10/15

Fingerprint

Hall mobility
Doping (additives)
Electrons
Nitrogen
Temperature
Compensation and Redress

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Iwata, H., & Itoh, K. M. (2000). Theoretical calculation of the electron Hall mobility in n-type 4H- and 6H-SiC. In Materials Science Forum (Vol. 338). Trans Tech Publ Ltd.

Theoretical calculation of the electron Hall mobility in n-type 4H- and 6H-SiC. / Iwata, Hisaomi; Itoh, Kohei M.

Materials Science Forum. Vol. 338 Trans Tech Publ Ltd, 2000.

Research output: Chapter in Book/Report/Conference proceedingChapter

Iwata, H & Itoh, KM 2000, Theoretical calculation of the electron Hall mobility in n-type 4H- and 6H-SiC. in Materials Science Forum. vol. 338, Trans Tech Publ Ltd, ICSCRM '99: The International Conference on Silicon Carbide and Related Materials, Research Triangle Park, NC, USA, 99/10/10.
Iwata H, Itoh KM. Theoretical calculation of the electron Hall mobility in n-type 4H- and 6H-SiC. In Materials Science Forum. Vol. 338. Trans Tech Publ Ltd. 2000
Iwata, Hisaomi ; Itoh, Kohei M. / Theoretical calculation of the electron Hall mobility in n-type 4H- and 6H-SiC. Materials Science Forum. Vol. 338 Trans Tech Publ Ltd, 2000.
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