Abstract
We propose a new quantum cross structure (QCS) device as a candidate beyond CMOS. The QCS consists of two metal nano-ribbons having edge-to-edge configuration like crossed fins.The QCS has potential application in both switching devices and high-density memories by sandwiching a few molecules and atoms. The QCS can also have electrodes with different dimensional electron systems because we can change the widths, the lengths, and the heights of two metal nano-ribbons, respectively. Changing the dimensions of electron systems in both electrodes, we have calculated the current-voltage characteristics depending on the coupling constants between a molecule and the electrode. We find that the conductance peak is much sharper in case of weak coupling regardless of dimensions of electron systems in electrodes, compared to strong coupling case. We also find that the conductance peak of QCS having electrodes with two-dimensional electron systems (2DES) is much sharper than that of QCS having electrodes with three-dimensional electron systems (3DES) in case of strong coupling because of quantum size effect of 2DES. These results imply that the QCS with the very sharp conductance peak can serve as the devices to switch on and off by very small voltage change.
| Original language | English |
|---|---|
| Title of host publication | Materials and Devices for Beyond CMOS Scaling |
| Pages | 1-6 |
| Number of pages | 6 |
| Publication status | Published - 2008 Dec 1 |
| Externally published | Yes |
| Event | 2008 MRS Spring Meeting - San Francisco, CA, United States Duration: 2008 Mar 24 → 2008 Mar 28 |
Publication series
| Name | Materials Research Society Symposium Proceedings |
|---|---|
| Volume | 1067 |
| ISSN (Print) | 0272-9172 |
Conference
| Conference | 2008 MRS Spring Meeting |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 08/3/24 → 08/3/28 |
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ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Theoretical investigation of new quantum-cross-structure device as a candidate beyond CMOS. / Kondo, Kenji; Kaiju, Hideo; Ishibashi, Akira.
Materials and Devices for Beyond CMOS Scaling. 2008. p. 1-6 (Materials Research Society Symposium Proceedings; Vol. 1067).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Theoretical investigation of new quantum-cross-structure device as a candidate beyond CMOS
AU - Kondo, Kenji
AU - Kaiju, Hideo
AU - Ishibashi, Akira
PY - 2008/12/1
Y1 - 2008/12/1
N2 - We propose a new quantum cross structure (QCS) device as a candidate beyond CMOS. The QCS consists of two metal nano-ribbons having edge-to-edge configuration like crossed fins.The QCS has potential application in both switching devices and high-density memories by sandwiching a few molecules and atoms. The QCS can also have electrodes with different dimensional electron systems because we can change the widths, the lengths, and the heights of two metal nano-ribbons, respectively. Changing the dimensions of electron systems in both electrodes, we have calculated the current-voltage characteristics depending on the coupling constants between a molecule and the electrode. We find that the conductance peak is much sharper in case of weak coupling regardless of dimensions of electron systems in electrodes, compared to strong coupling case. We also find that the conductance peak of QCS having electrodes with two-dimensional electron systems (2DES) is much sharper than that of QCS having electrodes with three-dimensional electron systems (3DES) in case of strong coupling because of quantum size effect of 2DES. These results imply that the QCS with the very sharp conductance peak can serve as the devices to switch on and off by very small voltage change.
AB - We propose a new quantum cross structure (QCS) device as a candidate beyond CMOS. The QCS consists of two metal nano-ribbons having edge-to-edge configuration like crossed fins.The QCS has potential application in both switching devices and high-density memories by sandwiching a few molecules and atoms. The QCS can also have electrodes with different dimensional electron systems because we can change the widths, the lengths, and the heights of two metal nano-ribbons, respectively. Changing the dimensions of electron systems in both electrodes, we have calculated the current-voltage characteristics depending on the coupling constants between a molecule and the electrode. We find that the conductance peak is much sharper in case of weak coupling regardless of dimensions of electron systems in electrodes, compared to strong coupling case. We also find that the conductance peak of QCS having electrodes with two-dimensional electron systems (2DES) is much sharper than that of QCS having electrodes with three-dimensional electron systems (3DES) in case of strong coupling because of quantum size effect of 2DES. These results imply that the QCS with the very sharp conductance peak can serve as the devices to switch on and off by very small voltage change.
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M3 - Conference contribution
SN - 9781605608457
T3 - Materials Research Society Symposium Proceedings
SP - 1
EP - 6
BT - Materials and Devices for Beyond CMOS Scaling
ER -