Theoretical investigation of new quantum-cross-structure device as a candidate beyond CMOS

Kenji Kondo, Hideo Kaiju, Akira Ishibashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We propose a new quantum cross structure (QCS) device as a candidate beyond CMOS. The QCS consists of two metal nano-ribbons having edge-to-edge configuration like crossed fins.The QCS has potential application in both switching devices and high-density memories by sandwiching a few molecules and atoms. The QCS can also have electrodes with different dimensional electron systems because we can change the widths, the lengths, and the heights of two metal nano-ribbons, respectively. Changing the dimensions of electron systems in both electrodes, we have calculated the current-voltage characteristics depending on the coupling constants between a molecule and the electrode. We find that the conductance peak is much sharper in case of weak coupling regardless of dimensions of electron systems in electrodes, compared to strong coupling case. We also find that the conductance peak of QCS having electrodes with two-dimensional electron systems (2DES) is much sharper than that of QCS having electrodes with three-dimensional electron systems (3DES) in case of strong coupling because of quantum size effect of 2DES. These results imply that the QCS with the very sharp conductance peak can serve as the devices to switch on and off by very small voltage change.

Original languageEnglish
Title of host publicationMaterials and Devices for Beyond CMOS Scaling
Pages1-6
Number of pages6
Publication statusPublished - 2008 Dec 1
Externally publishedYes
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2008 Mar 242008 Mar 28

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1067
ISSN (Print)0272-9172

Conference

Conference2008 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period08/3/2408/3/28

Fingerprint

CMOS
Electrodes
electrodes
Electrons
electrons
ribbons
Metals
Molecules
electric potential
fins
Current voltage characteristics
metals
molecules
Switches
Data storage equipment
Atoms
Electric potential
configurations
atoms

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kondo, K., Kaiju, H., & Ishibashi, A. (2008). Theoretical investigation of new quantum-cross-structure device as a candidate beyond CMOS. In Materials and Devices for Beyond CMOS Scaling (pp. 1-6). (Materials Research Society Symposium Proceedings; Vol. 1067).

Theoretical investigation of new quantum-cross-structure device as a candidate beyond CMOS. / Kondo, Kenji; Kaiju, Hideo; Ishibashi, Akira.

Materials and Devices for Beyond CMOS Scaling. 2008. p. 1-6 (Materials Research Society Symposium Proceedings; Vol. 1067).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kondo, K, Kaiju, H & Ishibashi, A 2008, Theoretical investigation of new quantum-cross-structure device as a candidate beyond CMOS. in Materials and Devices for Beyond CMOS Scaling. Materials Research Society Symposium Proceedings, vol. 1067, pp. 1-6, 2008 MRS Spring Meeting, San Francisco, CA, United States, 08/3/24.
Kondo K, Kaiju H, Ishibashi A. Theoretical investigation of new quantum-cross-structure device as a candidate beyond CMOS. In Materials and Devices for Beyond CMOS Scaling. 2008. p. 1-6. (Materials Research Society Symposium Proceedings).
Kondo, Kenji ; Kaiju, Hideo ; Ishibashi, Akira. / Theoretical investigation of new quantum-cross-structure device as a candidate beyond CMOS. Materials and Devices for Beyond CMOS Scaling. 2008. pp. 1-6 (Materials Research Society Symposium Proceedings).
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