TY - JOUR
T1 - Theory of the anisotropy of the electron Hall mobility in n-type 4H- and 6H-SiC
AU - Iwata, Hisaomi
AU - Itoh, Kohei M.
AU - Pensl, Gerhard
PY - 2000/8/15
Y1 - 2000/8/15
N2 - A theoretical model for the calculation of the anisotropy in the electron Hall mobility is reported for n-type bulk single crystals of 4H- and 6H-SiC for the three distinct Hall measurement configurations: (a) [B∥c, j⊥c], (b) [B⊥c, j⊥c], and (c) [B⊥c, j∥c], where B, j, and c are the directions of the magnetic field, current flow, and c axis of the hexagonal unit cell, respectively. Comparison with experimental results shows that the anisotropy of the electron transport in both 4H- and 6H-SiC can be explained solely by the anisotropy in the effective electron mass tensors.
AB - A theoretical model for the calculation of the anisotropy in the electron Hall mobility is reported for n-type bulk single crystals of 4H- and 6H-SiC for the three distinct Hall measurement configurations: (a) [B∥c, j⊥c], (b) [B⊥c, j⊥c], and (c) [B⊥c, j∥c], where B, j, and c are the directions of the magnetic field, current flow, and c axis of the hexagonal unit cell, respectively. Comparison with experimental results shows that the anisotropy of the electron transport in both 4H- and 6H-SiC can be explained solely by the anisotropy in the effective electron mass tensors.
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U2 - 10.1063/1.1305556
DO - 10.1063/1.1305556
M3 - Article
AN - SCOPUS:0000637042
SN - 0021-8979
VL - 88
SP - 1956
EP - 1961
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 4
ER -