Theory of the electron mobility in n-type 6H-SiC

T. Kinoshita, K. M. Itoh, M. Schadt, G. Pensl

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We report on calculations of the anisotropy of the electron Hall mobility and its temperature dependence in n-type 6H-SiC. The model is based on the conduction band structure determined recently by a first-principle calculation. It provides explicit and easy to use analytical expressions for both drift and Hall mobilities. The calculation of the Hall mobility based on our model agrees very well with experimentally determined anisotropic Hall mobility in 6H-SiC.

Original languageEnglish
Pages (from-to)8193-8198
Number of pages6
JournalJournal of Applied Physics
Volume85
Issue number12
DOIs
Publication statusPublished - 1999 Jun 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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