Theory of the electron mobility in n-type 6H-SiC

T. Kinoshita; K. M. Itoh; M. Schadt; G. Pensl

doi:10.1063/1.370659

Theory of the electron mobility in n-type 6H-SiC

T. Kinoshita, K. M. Itoh, M. Schadt, G. Pensl

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We report on calculations of the anisotropy of the electron Hall mobility and its temperature dependence in n-type 6H-SiC. The model is based on the conduction band structure determined recently by a first-principle calculation. It provides explicit and easy to use analytical expressions for both drift and Hall mobilities. The calculation of the Hall mobility based on our model agrees very well with experimentally determined anisotropic Hall mobility in 6H-SiC.

Original language	English
Pages (from-to)	8193-8198
Number of pages	6
Journal	Journal of Applied Physics
Volume	85
Issue number	12
DOIs	https://doi.org/10.1063/1.370659
Publication status	Published - 1999 Jun 15

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.370659

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abstract = "We report on calculations of the anisotropy of the electron Hall mobility and its temperature dependence in n-type 6H-SiC. The model is based on the conduction band structure determined recently by a first-principle calculation. It provides explicit and easy to use analytical expressions for both drift and Hall mobilities. The calculation of the Hall mobility based on our model agrees very well with experimentally determined anisotropic Hall mobility in 6H-SiC.",

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N2 - We report on calculations of the anisotropy of the electron Hall mobility and its temperature dependence in n-type 6H-SiC. The model is based on the conduction band structure determined recently by a first-principle calculation. It provides explicit and easy to use analytical expressions for both drift and Hall mobilities. The calculation of the Hall mobility based on our model agrees very well with experimentally determined anisotropic Hall mobility in 6H-SiC.

AB - We report on calculations of the anisotropy of the electron Hall mobility and its temperature dependence in n-type 6H-SiC. The model is based on the conduction band structure determined recently by a first-principle calculation. It provides explicit and easy to use analytical expressions for both drift and Hall mobilities. The calculation of the Hall mobility based on our model agrees very well with experimentally determined anisotropic Hall mobility in 6H-SiC.

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Theory of the electron mobility in n-type 6H-SiC

Abstract

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