Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers

T. Iwai, H. Shioya, D. Kondo, S. Hirose, A. Kawabata, S. Sato, M. Nihei, T. Kikkawa, K. Joshin, Y. Awano, N. Yokoyama

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    31 Citations (Scopus)

    Abstract

    Carbon nanotubes (CNTs) have been successfully developed as thermal and source bumps for flip-chip high power amplifiers (HPAs). The newly developed 15 μm long CNT bumps exhibit thermal conductivity of 1400 W/m·K. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 2.4 mm utilizing CNT bumps, operating voltage of 40 V, exhibits an output power of 39 dBm at a frequency of 2.1GHz without any degradation due to heat-up. To our knowledge, this is the first report about a practical application of CNTs using their high thermal conductivity.

    Original languageEnglish
    Title of host publicationIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
    Pages257-260
    Number of pages4
    Publication statusPublished - 2005
    EventIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
    Duration: 2005 Dec 52005 Dec 7

    Publication series

    NameTechnical Digest - International Electron Devices Meeting, IEDM
    Volume2005
    ISSN (Print)0163-1918

    Other

    OtherIEEE International Electron Devices Meeting, 2005 IEDM
    CountryUnited States
    CityWashington, DC, MD
    Period05/12/505/12/7

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

    Fingerprint Dive into the research topics of 'Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers'. Together they form a unique fingerprint.

    Cite this