Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers

T. Iwai, H. Shioya, D. Kondo, S. Hirose, A. Kawabata, S. Sato, M. Nihei, T. Kikkawa, K. Joshin, Yuji Awano, N. Yokoyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

29 Citations (Scopus)

Abstract

Carbon nanotubes (CNTs) have been successfully developed as thermal and source bumps for flip-chip high power amplifiers (HPAs). The newly developed 15 μm long CNT bumps exhibit thermal conductivity of 1400 W/m·K. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 2.4 mm utilizing CNT bumps, operating voltage of 40 V, exhibits an output power of 39 dBm at a frequency of 2.1GHz without any degradation due to heat-up. To our knowledge, this is the first report about a practical application of CNTs using their high thermal conductivity.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
Pages257-260
Number of pages4
Volume2005
Publication statusPublished - 2005
Externally publishedYes
EventIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
Duration: 2005 Dec 52005 Dec 7

Other

OtherIEEE International Electron Devices Meeting, 2005 IEDM
CountryUnited States
CityWashington, DC, MD
Period05/12/505/12/7

Fingerprint

Power amplifiers
Carbon nanotubes
Thermal conductivity
High electron mobility transistors
Degradation
Hot Temperature
Electric potential

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Iwai, T., Shioya, H., Kondo, D., Hirose, S., Kawabata, A., Sato, S., ... Yokoyama, N. (2005). Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers. In Technical Digest - International Electron Devices Meeting, IEDM (Vol. 2005, pp. 257-260). [1609322]

Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers. / Iwai, T.; Shioya, H.; Kondo, D.; Hirose, S.; Kawabata, A.; Sato, S.; Nihei, M.; Kikkawa, T.; Joshin, K.; Awano, Yuji; Yokoyama, N.

Technical Digest - International Electron Devices Meeting, IEDM. Vol. 2005 2005. p. 257-260 1609322.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Iwai, T, Shioya, H, Kondo, D, Hirose, S, Kawabata, A, Sato, S, Nihei, M, Kikkawa, T, Joshin, K, Awano, Y & Yokoyama, N 2005, Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers. in Technical Digest - International Electron Devices Meeting, IEDM. vol. 2005, 1609322, pp. 257-260, IEEE International Electron Devices Meeting, 2005 IEDM, Washington, DC, MD, United States, 05/12/5.
Iwai T, Shioya H, Kondo D, Hirose S, Kawabata A, Sato S et al. Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers. In Technical Digest - International Electron Devices Meeting, IEDM. Vol. 2005. 2005. p. 257-260. 1609322
Iwai, T. ; Shioya, H. ; Kondo, D. ; Hirose, S. ; Kawabata, A. ; Sato, S. ; Nihei, M. ; Kikkawa, T. ; Joshin, K. ; Awano, Yuji ; Yokoyama, N. / Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers. Technical Digest - International Electron Devices Meeting, IEDM. Vol. 2005 2005. pp. 257-260
@inproceedings{377fe62edb694110b41f8615b3279762,
title = "Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers",
abstract = "Carbon nanotubes (CNTs) have been successfully developed as thermal and source bumps for flip-chip high power amplifiers (HPAs). The newly developed 15 μm long CNT bumps exhibit thermal conductivity of 1400 W/m·K. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 2.4 mm utilizing CNT bumps, operating voltage of 40 V, exhibits an output power of 39 dBm at a frequency of 2.1GHz without any degradation due to heat-up. To our knowledge, this is the first report about a practical application of CNTs using their high thermal conductivity.",
author = "T. Iwai and H. Shioya and D. Kondo and S. Hirose and A. Kawabata and S. Sato and M. Nihei and T. Kikkawa and K. Joshin and Yuji Awano and N. Yokoyama",
year = "2005",
language = "English",
isbn = "078039268X",
volume = "2005",
pages = "257--260",
booktitle = "Technical Digest - International Electron Devices Meeting, IEDM",

}

TY - GEN

T1 - Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers

AU - Iwai, T.

AU - Shioya, H.

AU - Kondo, D.

AU - Hirose, S.

AU - Kawabata, A.

AU - Sato, S.

AU - Nihei, M.

AU - Kikkawa, T.

AU - Joshin, K.

AU - Awano, Yuji

AU - Yokoyama, N.

PY - 2005

Y1 - 2005

N2 - Carbon nanotubes (CNTs) have been successfully developed as thermal and source bumps for flip-chip high power amplifiers (HPAs). The newly developed 15 μm long CNT bumps exhibit thermal conductivity of 1400 W/m·K. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 2.4 mm utilizing CNT bumps, operating voltage of 40 V, exhibits an output power of 39 dBm at a frequency of 2.1GHz without any degradation due to heat-up. To our knowledge, this is the first report about a practical application of CNTs using their high thermal conductivity.

AB - Carbon nanotubes (CNTs) have been successfully developed as thermal and source bumps for flip-chip high power amplifiers (HPAs). The newly developed 15 μm long CNT bumps exhibit thermal conductivity of 1400 W/m·K. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 2.4 mm utilizing CNT bumps, operating voltage of 40 V, exhibits an output power of 39 dBm at a frequency of 2.1GHz without any degradation due to heat-up. To our knowledge, this is the first report about a practical application of CNTs using their high thermal conductivity.

UR - http://www.scopus.com/inward/record.url?scp=33847710695&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847710695&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33847710695

SN - 078039268X

SN - 9780780392687

VL - 2005

SP - 257

EP - 260

BT - Technical Digest - International Electron Devices Meeting, IEDM

ER -