Abstract
Carbon nanotubes (CNTs) have been successfully developed as thermal and source bumps for flip-chip high power amplifiers (HPAs). The newly developed 15 μm long CNT bumps exhibit thermal conductivity of 1400 W/m·K. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 2.4 mm utilizing CNT bumps, operating voltage of 40 V, exhibits an output power of 39 dBm at a frequency of 2.1GHz without any degradation due to heat-up. To our knowledge, this is the first report about a practical application of CNTs using their high thermal conductivity.
| Original language | English |
|---|---|
| Title of host publication | IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest |
| Pages | 257-260 |
| Number of pages | 4 |
| Publication status | Published - 2005 Dec 1 |
| Event | IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States Duration: 2005 Dec 5 → 2005 Dec 7 |
Publication series
| Name | Technical Digest - International Electron Devices Meeting, IEDM |
|---|---|
| Volume | 2005 |
| ISSN (Print) | 0163-1918 |
Other
| Other | IEEE International Electron Devices Meeting, 2005 IEDM |
|---|---|
| Country | United States |
| City | Washington, DC, MD |
| Period | 05/12/5 → 05/12/7 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Iwai, T., Shioya, H., Kondo, D., Hirose, S., Kawabata, A., Sato, S., Nihei, M., Kikkawa, T., Joshin, K., Awano, Y., & Yokoyama, N. (2005). Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 257-260). [1609322] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).