TY - GEN
T1 - Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers
AU - Iwai, T.
AU - Shioya, H.
AU - Kondo, D.
AU - Hirose, S.
AU - Kawabata, A.
AU - Sato, S.
AU - Nihei, M.
AU - Kikkawa, T.
AU - Joshin, K.
AU - Awano, Y.
AU - Yokoyama, N.
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2005
Y1 - 2005
N2 - Carbon nanotubes (CNTs) have been successfully developed as thermal and source bumps for flip-chip high power amplifiers (HPAs). The newly developed 15 μm long CNT bumps exhibit thermal conductivity of 1400 W/m·K. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 2.4 mm utilizing CNT bumps, operating voltage of 40 V, exhibits an output power of 39 dBm at a frequency of 2.1GHz without any degradation due to heat-up. To our knowledge, this is the first report about a practical application of CNTs using their high thermal conductivity.
AB - Carbon nanotubes (CNTs) have been successfully developed as thermal and source bumps for flip-chip high power amplifiers (HPAs). The newly developed 15 μm long CNT bumps exhibit thermal conductivity of 1400 W/m·K. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 2.4 mm utilizing CNT bumps, operating voltage of 40 V, exhibits an output power of 39 dBm at a frequency of 2.1GHz without any degradation due to heat-up. To our knowledge, this is the first report about a practical application of CNTs using their high thermal conductivity.
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M3 - Conference contribution
AN - SCOPUS:33847710695
SN - 078039268X
SN - 9780780392687
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 257
EP - 260
BT - IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
T2 - IEEE International Electron Devices Meeting, 2005 IEDM
Y2 - 5 December 2005 through 7 December 2005
ER -