Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers

T. Iwai; H. Shioya; D. Kondo; S. Hirose; A. Kawabata; S. Sato; M. Nihei; T. Kikkawa; K. Joshin; Y. Awano; N. Yokoyama

Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers

T. Iwai, H. Shioya, D. Kondo, S. Hirose, A. Kawabata, S. Sato, M. Nihei, T. Kikkawa, K. Joshin, Y. Awano, N. Yokoyama

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Carbon nanotubes (CNTs) have been successfully developed as thermal and source bumps for flip-chip high power amplifiers (HPAs). The newly developed 15 μm long CNT bumps exhibit thermal conductivity of 1400 W/m·K. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 2.4 mm utilizing CNT bumps, operating voltage of 40 V, exhibits an output power of 39 dBm at a frequency of 2.1GHz without any degradation due to heat-up. To our knowledge, this is the first report about a practical application of CNTs using their high thermal conductivity.

Original language	English
Title of host publication	IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages	257-260
Number of pages	4
Publication status	Published - 2005
Event	IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States Duration: 2005 Dec 5 → 2005 Dec 7

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2005
ISSN (Print)	0163-1918

Other

Other	IEEE International Electron Devices Meeting, 2005 IEDM
Country	United States
City	Washington, DC, MD
Period	05/12/5 → 05/12/7

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Cite this

Iwai, T., Shioya, H., Kondo, D., Hirose, S., Kawabata, A., Sato, S., Nihei, M., Kikkawa, T., Joshin, K., Awano, Y., & Yokoyama, N. (2005). Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 257-260). [1609322] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers. / Iwai, T.; Shioya, H.; Kondo, D.; Hirose, S.; Kawabata, A.; Sato, S.; Nihei, M.; Kikkawa, T.; Joshin, K.; Awano, Y.; Yokoyama, N.

IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. p. 257-260 1609322 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Iwai, T, Shioya, H, Kondo, D, Hirose, S, Kawabata, A, Sato, S, Nihei, M, Kikkawa, T, Joshin, K, Awano, Y & Yokoyama, N 2005, Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers. in IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest., 1609322, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2005, pp. 257-260, IEEE International Electron Devices Meeting, 2005 IEDM, Washington, DC, MD, United States, 05/12/5.

Iwai, T. ; Shioya, H. ; Kondo, D. ; Hirose, S. ; Kawabata, A. ; Sato, S. ; Nihei, M. ; Kikkawa, T. ; Joshin, K. ; Awano, Y. ; Yokoyama, N. / Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers. IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. pp. 257-260 (Technical Digest - International Electron Devices Meeting, IEDM).

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title = "Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers",

abstract = "Carbon nanotubes (CNTs) have been successfully developed as thermal and source bumps for flip-chip high power amplifiers (HPAs). The newly developed 15 μm long CNT bumps exhibit thermal conductivity of 1400 W/m·K. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 2.4 mm utilizing CNT bumps, operating voltage of 40 V, exhibits an output power of 39 dBm at a frequency of 2.1GHz without any degradation due to heat-up. To our knowledge, this is the first report about a practical application of CNTs using their high thermal conductivity.",

author = "T. Iwai and H. Shioya and D. Kondo and S. Hirose and A. Kawabata and S. Sato and M. Nihei and T. Kikkawa and K. Joshin and Y. Awano and N. Yokoyama",

year = "2005",

language = "English",

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AU - Iwai, T.

AU - Shioya, H.

AU - Kondo, D.

AU - Hirose, S.

AU - Kawabata, A.

AU - Sato, S.

AU - Nihei, M.

AU - Kikkawa, T.

AU - Joshin, K.

AU - Awano, Y.

AU - Yokoyama, N.

PY - 2005

Y1 - 2005

N2 - Carbon nanotubes (CNTs) have been successfully developed as thermal and source bumps for flip-chip high power amplifiers (HPAs). The newly developed 15 μm long CNT bumps exhibit thermal conductivity of 1400 W/m·K. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 2.4 mm utilizing CNT bumps, operating voltage of 40 V, exhibits an output power of 39 dBm at a frequency of 2.1GHz without any degradation due to heat-up. To our knowledge, this is the first report about a practical application of CNTs using their high thermal conductivity.

AB - Carbon nanotubes (CNTs) have been successfully developed as thermal and source bumps for flip-chip high power amplifiers (HPAs). The newly developed 15 μm long CNT bumps exhibit thermal conductivity of 1400 W/m·K. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 2.4 mm utilizing CNT bumps, operating voltage of 40 V, exhibits an output power of 39 dBm at a frequency of 2.1GHz without any degradation due to heat-up. To our knowledge, this is the first report about a practical application of CNTs using their high thermal conductivity.

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SN - 9780780392687

T3 - Technical Digest - International Electron Devices Meeting, IEDM

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BT - IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest

T2 - IEEE International Electron Devices Meeting, 2005 IEDM

Y2 - 5 December 2005 through 7 December 2005

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