Abstract
Carbon nanotubes (CNTs) have been successfully developed as thermal and source bumps for flip-chip high power amplifiers (HPAs). The newly developed 15 μm long CNT bumps exhibit thermal conductivity of 1400 W/m·K. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 2.4 mm utilizing CNT bumps, operating voltage of 40 V, exhibits an output power of 39 dBm at a frequency of 2.1GHz without any degradation due to heat-up. To our knowledge, this is the first report about a practical application of CNTs using their high thermal conductivity.
| Original language | English |
|---|---|
| Title of host publication | Technical Digest - International Electron Devices Meeting, IEDM |
| Pages | 257-260 |
| Number of pages | 4 |
| Volume | 2005 |
| Publication status | Published - 2005 |
| Externally published | Yes |
| Event | IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States Duration: 2005 Dec 5 → 2005 Dec 7 |
Other
| Other | IEEE International Electron Devices Meeting, 2005 IEDM |
|---|---|
| Country | United States |
| City | Washington, DC, MD |
| Period | 05/12/5 → 05/12/7 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers. / Iwai, T.; Shioya, H.; Kondo, D.; Hirose, S.; Kawabata, A.; Sato, S.; Nihei, M.; Kikkawa, T.; Joshin, K.; Awano, Yuji; Yokoyama, N.
Technical Digest - International Electron Devices Meeting, IEDM. Vol. 2005 2005. p. 257-260 1609322.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers
AU - Iwai, T.
AU - Shioya, H.
AU - Kondo, D.
AU - Hirose, S.
AU - Kawabata, A.
AU - Sato, S.
AU - Nihei, M.
AU - Kikkawa, T.
AU - Joshin, K.
AU - Awano, Yuji
AU - Yokoyama, N.
PY - 2005
Y1 - 2005
N2 - Carbon nanotubes (CNTs) have been successfully developed as thermal and source bumps for flip-chip high power amplifiers (HPAs). The newly developed 15 μm long CNT bumps exhibit thermal conductivity of 1400 W/m·K. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 2.4 mm utilizing CNT bumps, operating voltage of 40 V, exhibits an output power of 39 dBm at a frequency of 2.1GHz without any degradation due to heat-up. To our knowledge, this is the first report about a practical application of CNTs using their high thermal conductivity.
AB - Carbon nanotubes (CNTs) have been successfully developed as thermal and source bumps for flip-chip high power amplifiers (HPAs). The newly developed 15 μm long CNT bumps exhibit thermal conductivity of 1400 W/m·K. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 2.4 mm utilizing CNT bumps, operating voltage of 40 V, exhibits an output power of 39 dBm at a frequency of 2.1GHz without any degradation due to heat-up. To our knowledge, this is the first report about a practical application of CNTs using their high thermal conductivity.
UR - http://www.scopus.com/inward/record.url?scp=33847710695&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33847710695&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:33847710695
SN - 078039268X
SN - 9780780392687
VL - 2005
SP - 257
EP - 260
BT - Technical Digest - International Electron Devices Meeting, IEDM
ER -