Thermal-aware CMOS: Challenges for future technology and design evolutions

Ken Uchida, Tsunaki Takahashi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    Three-dimensional (3D) field-effect transistors (FETs) such as FinFETs and nanowire FETs are device structures for extremely scaled FETs. However, the thermal properties of 3D FETs become worse than those of conventional planar MOSFETs. As a result, an increase in channel temperature during operation, which is called self-heating effects (SHEs) is prominent in nanoscale devices. In this work, 1) SHEs in scaled devices are experimentally evaluated. In particular, SHEs of SOI devices with ultra-thin (UT) buried oxide (BOX) are measured using a four-terminal gate electrode. Then, the modeling of thermal resistance/conductance of interconnect wires are discussed. Finally, the co-optimization of thermal and electrical properties of devices in terms of analog performance is described.

    Original languageEnglish
    Title of host publication2016 46th European Solid-State Device Research Conference, ESSDERC 2016
    PublisherEditions Frontieres
    Pages150-153
    Number of pages4
    Volume2016-October
    ISBN (Electronic)9781509029693
    DOIs
    Publication statusPublished - 2016 Oct 18
    Event46th European Solid-State Device Research Conference, ESSDERC 2016 - Lausanne, Switzerland
    Duration: 2016 Sep 122016 Sep 15

    Other

    Other46th European Solid-State Device Research Conference, ESSDERC 2016
    CountrySwitzerland
    CityLausanne
    Period16/9/1216/9/15

    Keywords

    • fin-type FETs
    • Joule heating
    • nanowire FETs
    • slef-heating
    • SOI
    • thermal resistance

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Safety, Risk, Reliability and Quality

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  • Cite this

    Uchida, K., & Takahashi, T. (2016). Thermal-aware CMOS: Challenges for future technology and design evolutions. In 2016 46th European Solid-State Device Research Conference, ESSDERC 2016 (Vol. 2016-October, pp. 150-153). [7599609] Editions Frontieres. https://doi.org/10.1109/ESSDERC.2016.7599609