Thermal-aware device design of nanoscale bulk/SOI FinFETs: Suppression of operation temperature and its variability

Tsunaki Takahashi, Nobuyasu Beppu, Kunro Chen, Shunri Oda, Ken Uchida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

20 Citations (Scopus)

Abstract

The self-heating effects in Bulk/SOI FinFETs have been systematically investigated and compared. It is demonstrated that lattice temperature is significantly lower in Bulk FinFETs owing to the larger heat dissipation to the Si substrate. Heat dissipation paths in Bulk/SOI FinFETs have been studied and the device-parameter dependence of thermal characteristics has been analyzed. It is demonstrated that the Bulk FinFETs show greater temperature fluctuations resulting from device parameter variations. The fluctuation can be greatly suppressed by miniaturizing the extension length. It is shown that the impact of thermal resistance at the MOS interface is more significant in SOI FinFETs than in Bulk FinFETs.

Original languageEnglish
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
Pages34.6.1-34.6.4
DOIs
Publication statusPublished - 2011 Dec 1
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: 2011 Dec 52011 Dec 7

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period11/12/511/12/7

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Takahashi, T., Beppu, N., Chen, K., Oda, S., & Uchida, K. (2011). Thermal-aware device design of nanoscale bulk/SOI FinFETs: Suppression of operation temperature and its variability. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 34.6.1-34.6.4). [6131672] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131672