Thermal conductivity measurements of low-k films using thermoreflectance phenomenon

M. Kuwahara, O. Suzuki, S. Takada, N. Hata, P. Fons, J. Tominaga

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The thermal conductivity of low-dielectric-constant (low-k) materials has been studied by a nano second thermoreflectance measurement system (Nano-TheMS). The Nano-TheMS, which utilizes thermoreflectance, can easily measure the thermal conductivity of thin film of nano-meter scale thickness. We have measured a series of low-k film samples with varying methyl group content. The methyl group content is a significant factor in determining the dielectric constant and mechanical strength of low-k materials. We have also measured the temperature dependence of the thermal conductivity from room temperature to 300 °C as this dependence is essential to simulate realistic temperature distributions inside integrated devices. It was found that its dependence is not remarkable but the thermal conductivity gradually increase with rising temperature.

Original languageEnglish
Pages (from-to)796-799
Number of pages4
JournalMicroelectronic Engineering
Volume85
Issue number5-6
DOIs
Publication statusPublished - 2008 May 1
Externally publishedYes

Keywords

  • Low-k
  • Methyl group
  • Porous silica
  • Temperature dependence
  • Thermal conductivity
  • Thermoreflectance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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