Abstract
Optical bistability due to thermally induced refractive index changes is observed in MBE-grown InGaAs/InAlAs MQW etalon devices at around a 1.5 μm wavelength. The relation between optical bistable characteristics and incident beam wavelength is studied in detail using a tunable F-center laser.
Original language | English |
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Pages (from-to) | 55-58 |
Number of pages | 4 |
Journal | IEEE Photonics Technology Letters |
Volume | 1 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1989 Mar |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering