Optical bistability due to thermally induced refractive index changes is observed in MBE-grown InGaAs/InAlAs MQW etalon devices at around a 1.5 μm wavelength. The relation between optical bistable characteristics and incident beam wavelength is studied in detail using a tunable F-center laser.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering