Thermal Optical Bistability in InGaAs/InAlAs MQW Etalons at 1.5 μm Wavelength

K. Nonaka; Y. Kawamura; H. Tsuda; K. Kubodera; H. Kawaguchi

doi:10.1109/68.87895

Thermal Optical Bistability in InGaAs/InAlAs MQW Etalons at 1.5 μm Wavelength

K. Nonaka, Y. Kawamura, H. Tsuda, K. Kubodera, H. Kawaguchi

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Optical bistability due to thermally induced refractive index changes is observed in MBE-grown InGaAs/InAlAs MQW etalon devices at around a 1.5 μm wavelength. The relation between optical bistable characteristics and incident beam wavelength is studied in detail using a tunable F-center laser.

Original language	English
Pages (from-to)	55-58
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	1
Issue number	3
DOIs	https://doi.org/10.1109/68.87895
Publication status	Published - 1989 Mar
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.87895

Cite this

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title = "Thermal Optical Bistability in InGaAs/InAlAs MQW Etalons at 1.5 μm Wavelength",

abstract = "Optical bistability due to thermally induced refractive index changes is observed in MBE-grown InGaAs/InAlAs MQW etalon devices at around a 1.5 μm wavelength. The relation between optical bistable characteristics and incident beam wavelength is studied in detail using a tunable F-center laser.",

author = "K. Nonaka and Y. Kawamura and H. Tsuda and K. Kubodera and H. Kawaguchi",

year = "1989",

month = mar,

doi = "10.1109/68.87895",

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AU - Nonaka, K.

AU - Kawamura, Y.

AU - Tsuda, H.

AU - Kubodera, K.

AU - Kawaguchi, H.

PY - 1989/3

Y1 - 1989/3

N2 - Optical bistability due to thermally induced refractive index changes is observed in MBE-grown InGaAs/InAlAs MQW etalon devices at around a 1.5 μm wavelength. The relation between optical bistable characteristics and incident beam wavelength is studied in detail using a tunable F-center laser.

AB - Optical bistability due to thermally induced refractive index changes is observed in MBE-grown InGaAs/InAlAs MQW etalon devices at around a 1.5 μm wavelength. The relation between optical bistable characteristics and incident beam wavelength is studied in detail using a tunable F-center laser.

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Thermal Optical Bistability in InGaAs/InAlAs MQW Etalons at 1.5 μm Wavelength

Abstract

ASJC Scopus subject areas

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