Thermal Optical Bistability in InGaAs/InAlAs MQW Etalons at 1.5 μm Wavelength

K. Nonaka, Y. Kawamura, H. Tsuda, K. Kubodera, H. Kawaguchi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Optical bistability due to thermally induced refractive index changes is observed in MBE-grown InGaAs/InAlAs MQW etalon devices at around a 1.5 μm wavelength. The relation between optical bistable characteristics and incident beam wavelength is studied in detail using a tunable F-center laser.

Original languageEnglish
Pages (from-to)55-58
Number of pages4
JournalIEEE Photonics Technology Letters
Volume1
Issue number3
DOIs
Publication statusPublished - 1989 Mar
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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