Abstract
Optical bistability due to thermally induced refractive index changes is observed in MBE-grown InGaAs/InAlAs MQW etalon devices at around a 1.5 μm wavelength. The relation between optical bistable characteristics and incident beam wavelength is studied in detail using a tunable F-center laser.
| Original language | English |
|---|---|
| Pages (from-to) | 55-58 |
| Number of pages | 4 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 1 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1989 Mar |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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Cite this
Nonaka, K., Kawamura, Y., Tsuda, H., Kubodera, K., & Kawaguchi, H. (1989). Thermal Optical Bistability in InGaAs/InAlAs MQW Etalons at 1.5 μm Wavelength. IEEE Photonics Technology Letters, 1(3), 55-58. https://doi.org/10.1109/68.87895