Thermal stability and surface passivation of Ge nanowires coated by epitaxial SiGe shells

Shu Hu; Yoko Kawamura; Kevin C.Y. Huang; Yanying Li; Ann F. Marshall; Kohei M. Itoh; Mark L. Brongersma; Paul C. McIntyre

doi:10.1021/nl204053w

Thermal stability and surface passivation of Ge nanowires coated by epitaxial SiGe shells

Shu Hu, Yoko Kawamura, Kevin C.Y. Huang, Yanying Li, Ann F. Marshall, Kohei M. Itoh, Mark L. Brongersma, Paul C. McIntyre

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

Epitaxial growth of a highly strained, coherent SiGe alloy shell around a Ge nanowire core is investigated as a method to achieve surface passivation and carrier confinement, important in realizing nanowire devices. The high photoluminescence intensity observed from the core-shell nanowires with spectral features similar to that of bulk Ge indicates effective surface passivation. Thermal stability of these core-shell heterostructures has been systematically investigated, with a method demonstrated to avoid misfit strain relaxation during postgrowth annealing.

Original language	English
Pages (from-to)	1385-1391
Number of pages	7
Journal	Nano Letters
Volume	12
Issue number	3
DOIs	https://doi.org/10.1021/nl204053w
Publication status	Published - 2012 Mar 14

Keywords

Core-shell nanowires
in situ transmission electron microscopy (TEM)
photoluminescence
thermal stability

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl204053w

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title = "Thermal stability and surface passivation of Ge nanowires coated by epitaxial SiGe shells",

abstract = "Epitaxial growth of a highly strained, coherent SiGe alloy shell around a Ge nanowire core is investigated as a method to achieve surface passivation and carrier confinement, important in realizing nanowire devices. The high photoluminescence intensity observed from the core-shell nanowires with spectral features similar to that of bulk Ge indicates effective surface passivation. Thermal stability of these core-shell heterostructures has been systematically investigated, with a method demonstrated to avoid misfit strain relaxation during postgrowth annealing.",

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year = "2012",

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doi = "10.1021/nl204053w",

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T1 - Thermal stability and surface passivation of Ge nanowires coated by epitaxial SiGe shells

AU - Hu, Shu

AU - Kawamura, Yoko

AU - Huang, Kevin C.Y.

AU - Li, Yanying

AU - Marshall, Ann F.

AU - Itoh, Kohei M.

AU - Brongersma, Mark L.

AU - McIntyre, Paul C.

PY - 2012/3/14

Y1 - 2012/3/14

N2 - Epitaxial growth of a highly strained, coherent SiGe alloy shell around a Ge nanowire core is investigated as a method to achieve surface passivation and carrier confinement, important in realizing nanowire devices. The high photoluminescence intensity observed from the core-shell nanowires with spectral features similar to that of bulk Ge indicates effective surface passivation. Thermal stability of these core-shell heterostructures has been systematically investigated, with a method demonstrated to avoid misfit strain relaxation during postgrowth annealing.

AB - Epitaxial growth of a highly strained, coherent SiGe alloy shell around a Ge nanowire core is investigated as a method to achieve surface passivation and carrier confinement, important in realizing nanowire devices. The high photoluminescence intensity observed from the core-shell nanowires with spectral features similar to that of bulk Ge indicates effective surface passivation. Thermal stability of these core-shell heterostructures has been systematically investigated, with a method demonstrated to avoid misfit strain relaxation during postgrowth annealing.

KW - Core-shell nanowires

KW - in situ transmission electron microscopy (TEM)

KW - photoluminescence

KW - thermal stability

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JO - Nano Letters

JF - Nano Letters

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Thermal stability and surface passivation of Ge nanowires coated by epitaxial SiGe shells

Abstract

Keywords

ASJC Scopus subject areas

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