Thermal stability and surface passivation of Ge nanowires coated by epitaxial SiGe shells

Shu Hu, Yoko Kawamura, Kevin C.Y. Huang, Yanying Li, Ann F. Marshall, Kohei M. Itoh, Mark L. Brongersma, Paul C. McIntyre

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Epitaxial growth of a highly strained, coherent SiGe alloy shell around a Ge nanowire core is investigated as a method to achieve surface passivation and carrier confinement, important in realizing nanowire devices. The high photoluminescence intensity observed from the core-shell nanowires with spectral features similar to that of bulk Ge indicates effective surface passivation. Thermal stability of these core-shell heterostructures has been systematically investigated, with a method demonstrated to avoid misfit strain relaxation during postgrowth annealing.

Original languageEnglish
Pages (from-to)1385-1391
Number of pages7
JournalNano Letters
Volume12
Issue number3
DOIs
Publication statusPublished - 2012 Mar 14

Keywords

  • Core-shell nanowires
  • in situ transmission electron microscopy (TEM)
  • photoluminescence
  • thermal stability

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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  • Cite this

    Hu, S., Kawamura, Y., Huang, K. C. Y., Li, Y., Marshall, A. F., Itoh, K. M., Brongersma, M. L., & McIntyre, P. C. (2012). Thermal stability and surface passivation of Ge nanowires coated by epitaxial SiGe shells. Nano Letters, 12(3), 1385-1391. https://doi.org/10.1021/nl204053w