In this paper, a novel piezoresistive silicon accelerometer using SOI structure is described. The accelerometer is formed to have endurance for high temperature by perfect isolation of the piezoresistors. The accelerometer has surrounding mass structure to detect the three dimensional (3-D) acceleration with a new method using analog operating circuits. The sensor sizes were optimized with FEM simulation. The accelerometer was fabricated by bulk micro-machining technology. Both the temperature characteristics and the output characteristics were measured, and the characteristics of the fabricated chip were compared with the simulated results.
|Number of pages||4|
|Publication status||Published - 1995 Dec 1|
|Event||Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2) - Stockholm, Sweden|
Duration: 1995 Jun 25 → 1995 Jun 29
|Other||Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2)|
|Period||95/6/25 → 95/6/29|
ASJC Scopus subject areas