Three dimensional vector accelerometer using SOI structure for high temperature

Hidekuni Takao, Yoshinori Matsumoto, Hee Don Seo, Hidekazu Tanaka

Research output: Contribution to conferencePaper

12 Citations (Scopus)

Abstract

In this paper, a novel piezoresistive silicon accelerometer using SOI structure is described. The accelerometer is formed to have endurance for high temperature by perfect isolation of the piezoresistors. The accelerometer has surrounding mass structure to detect the three dimensional (3-D) acceleration with a new method using analog operating circuits. The sensor sizes were optimized with FEM simulation. The accelerometer was fabricated by bulk micro-machining technology. Both the temperature characteristics and the output characteristics were measured, and the characteristics of the fabricated chip were compared with the simulated results.

Original languageEnglish
Pages683-686
Number of pages4
Publication statusPublished - 1995 Dec 1
Externally publishedYes
EventProceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2) - Stockholm, Sweden
Duration: 1995 Jun 251995 Jun 29

Other

OtherProceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2)
CityStockholm, Sweden
Period95/6/2595/6/29

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Takao, H., Matsumoto, Y., Seo, H. D., & Tanaka, H. (1995). Three dimensional vector accelerometer using SOI structure for high temperature. 683-686. Paper presented at Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2), Stockholm, Sweden, .