Abstract
This paper describes a new narrow channel effect by quantum mechanical effects in ultra-narrow MOSFETs. Threshold voltage increase is observed at room temperature in ultra-narrow MOSFETs whose channel width is less than 10 nm. This result is in excellent agreement with simulation that takes into account horizontal and vertical carrier confinement in a silicon narrow wire, indicating that the increase in threshold voltage is caused by the quantum mechanical narrow channel effect.
| Original language | English |
|---|---|
| Pages (from-to) | 379-382 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - 1999 Dec 1 |
| Externally published | Yes |
| Event | 1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: 1999 Dec 5 → 1999 Dec 8 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry