Threshold voltage increase by quantum mechanical narrow channel effect in ultra-narrow MOSFETs

H. Majima, H. Ishikuro, T. Hiramoto

Research output: Contribution to journalConference article

23 Citations (Scopus)

Abstract

This paper describes a new narrow channel effect by quantum mechanical effects in ultra-narrow MOSFETs. Threshold voltage increase is observed at room temperature in ultra-narrow MOSFETs whose channel width is less than 10 nm. This result is in excellent agreement with simulation that takes into account horizontal and vertical carrier confinement in a silicon narrow wire, indicating that the increase in threshold voltage is caused by the quantum mechanical narrow channel effect.

Original languageEnglish
Pages (from-to)379-382
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1999 Dec 1
Externally publishedYes
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 1999 Dec 51999 Dec 8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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