Threshold voltage shift and drain current degradation by NBT stress in Si (110) pMOSFETs

Kensuke Ota, Masumi Saitoh, Yukio Nakabayashi, Takamitsu Ishihara, Toshinori Numata, Ken Uchida

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    Threshold voltage shift and drain current degradation by NBT stress in Si (100) and (110) pMOSFETs are systematically studied. Threshold voltage shift in (110) pFET is larger than that in (100) pFET. However, time and temperature dependence of NBTI suggest that the mechanisms of the NBTI degradation are independent of the surface orientations. It is newly found that the drain current degradation in (110) pFET is severer than that in (100) pFET even when the same amount of charges at the interface is generated. This can be explained by larger mobility degradation in (110) pFETs due to the generated interface traps.

    Original languageEnglish
    Title of host publication2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
    Pages134-137
    Number of pages4
    DOIs
    Publication statusPublished - 2010 Dec 15
    Event2010 European Solid State Device Research Conference, ESSDERC 2010 - Sevilla, Spain
    Duration: 2010 Sep 142010 Sep 16

    Publication series

    Name2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

    Other

    Other2010 European Solid State Device Research Conference, ESSDERC 2010
    CountrySpain
    CitySevilla
    Period10/9/1410/9/16

    ASJC Scopus subject areas

    • Condensed Matter Physics

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  • Cite this

    Ota, K., Saitoh, M., Nakabayashi, Y., Ishihara, T., Numata, T., & Uchida, K. (2010). Threshold voltage shift and drain current degradation by NBT stress in Si (110) pMOSFETs. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010 (pp. 134-137). [5618447] (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010). https://doi.org/10.1109/ESSDERC.2010.5618447