Threshold voltage shift and drain current degradation by NBT stress in Si (110) pMOSFETs

Kensuke Ota, Masumi Saitoh, Yukio Nakabayashi, Takamitsu Ishihara, Toshinori Numata, Ken Uchida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Threshold voltage shift and drain current degradation by NBT stress in Si (100) and (110) pMOSFETs are systematically studied. Threshold voltage shift in (110) pFET is larger than that in (100) pFET. However, time and temperature dependence of NBTI suggest that the mechanisms of the NBTI degradation are independent of the surface orientations. It is newly found that the drain current degradation in (110) pFET is severer than that in (100) pFET even when the same amount of charges at the interface is generated. This can be explained by larger mobility degradation in (110) pFETs due to the generated interface traps.

Original languageEnglish
Title of host publication2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
Pages134-137
Number of pages4
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event2010 European Solid State Device Research Conference, ESSDERC 2010 - Sevilla, Spain
Duration: 2010 Sep 142010 Sep 16

Other

Other2010 European Solid State Device Research Conference, ESSDERC 2010
CountrySpain
CitySevilla
Period10/9/1410/9/16

Fingerprint

threshold voltage
degradation
shift
time dependence
traps
temperature dependence

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Ota, K., Saitoh, M., Nakabayashi, Y., Ishihara, T., Numata, T., & Uchida, K. (2010). Threshold voltage shift and drain current degradation by NBT stress in Si (110) pMOSFETs. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010 (pp. 134-137). [5618447] https://doi.org/10.1109/ESSDERC.2010.5618447

Threshold voltage shift and drain current degradation by NBT stress in Si (110) pMOSFETs. / Ota, Kensuke; Saitoh, Masumi; Nakabayashi, Yukio; Ishihara, Takamitsu; Numata, Toshinori; Uchida, Ken.

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. p. 134-137 5618447.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ota, K, Saitoh, M, Nakabayashi, Y, Ishihara, T, Numata, T & Uchida, K 2010, Threshold voltage shift and drain current degradation by NBT stress in Si (110) pMOSFETs. in 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010., 5618447, pp. 134-137, 2010 European Solid State Device Research Conference, ESSDERC 2010, Sevilla, Spain, 10/9/14. https://doi.org/10.1109/ESSDERC.2010.5618447
Ota K, Saitoh M, Nakabayashi Y, Ishihara T, Numata T, Uchida K. Threshold voltage shift and drain current degradation by NBT stress in Si (110) pMOSFETs. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. p. 134-137. 5618447 https://doi.org/10.1109/ESSDERC.2010.5618447
Ota, Kensuke ; Saitoh, Masumi ; Nakabayashi, Yukio ; Ishihara, Takamitsu ; Numata, Toshinori ; Uchida, Ken. / Threshold voltage shift and drain current degradation by NBT stress in Si (110) pMOSFETs. 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. pp. 134-137
@inproceedings{50d9ed71c11840f8a9732b2aaddec880,
title = "Threshold voltage shift and drain current degradation by NBT stress in Si (110) pMOSFETs",
abstract = "Threshold voltage shift and drain current degradation by NBT stress in Si (100) and (110) pMOSFETs are systematically studied. Threshold voltage shift in (110) pFET is larger than that in (100) pFET. However, time and temperature dependence of NBTI suggest that the mechanisms of the NBTI degradation are independent of the surface orientations. It is newly found that the drain current degradation in (110) pFET is severer than that in (100) pFET even when the same amount of charges at the interface is generated. This can be explained by larger mobility degradation in (110) pFETs due to the generated interface traps.",
author = "Kensuke Ota and Masumi Saitoh and Yukio Nakabayashi and Takamitsu Ishihara and Toshinori Numata and Ken Uchida",
year = "2010",
doi = "10.1109/ESSDERC.2010.5618447",
language = "English",
isbn = "9781424466610",
pages = "134--137",
booktitle = "2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010",

}

TY - GEN

T1 - Threshold voltage shift and drain current degradation by NBT stress in Si (110) pMOSFETs

AU - Ota, Kensuke

AU - Saitoh, Masumi

AU - Nakabayashi, Yukio

AU - Ishihara, Takamitsu

AU - Numata, Toshinori

AU - Uchida, Ken

PY - 2010

Y1 - 2010

N2 - Threshold voltage shift and drain current degradation by NBT stress in Si (100) and (110) pMOSFETs are systematically studied. Threshold voltage shift in (110) pFET is larger than that in (100) pFET. However, time and temperature dependence of NBTI suggest that the mechanisms of the NBTI degradation are independent of the surface orientations. It is newly found that the drain current degradation in (110) pFET is severer than that in (100) pFET even when the same amount of charges at the interface is generated. This can be explained by larger mobility degradation in (110) pFETs due to the generated interface traps.

AB - Threshold voltage shift and drain current degradation by NBT stress in Si (100) and (110) pMOSFETs are systematically studied. Threshold voltage shift in (110) pFET is larger than that in (100) pFET. However, time and temperature dependence of NBTI suggest that the mechanisms of the NBTI degradation are independent of the surface orientations. It is newly found that the drain current degradation in (110) pFET is severer than that in (100) pFET even when the same amount of charges at the interface is generated. This can be explained by larger mobility degradation in (110) pFETs due to the generated interface traps.

UR - http://www.scopus.com/inward/record.url?scp=78649929786&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649929786&partnerID=8YFLogxK

U2 - 10.1109/ESSDERC.2010.5618447

DO - 10.1109/ESSDERC.2010.5618447

M3 - Conference contribution

AN - SCOPUS:78649929786

SN - 9781424466610

SP - 134

EP - 137

BT - 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

ER -