Threshold voltage shift and drain current degradation by NBT stress in Si (110) pMOSFETs

Kensuke Ota, Masumi Saitoh, Yukio Nakabayashi, Takamitsu Ishihara, Toshinori Numata, Ken Uchida

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

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    Physics & Astronomy