Threshold voltage shift and drain current degradation by negative bias temperature instability in Si (110) p-channel metal-oxide-semiconductor field-effect transistor

K. Ota, M. Saitoh, Y. Nakabayashi, T. Ishihara, K. Uchida, T. Numata

    Research output: Contribution to journal › Article › peer-review

    3 Citations (Scopus)

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    Physics & Astronomy