ThruChip Interface (TCI) for 3D integration of low-power system

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper presents a counterpart of TSV and a circuit solution that enables 3D integration of power-aware systems. It bears comparison with TSV in performance but less expensive.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
Publication statusPublished - 2010
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 2010 Dec 62010 Dec 8

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period10/12/610/12/8

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Networks (circuits)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Kuroda, T. (2010). ThruChip Interface (TCI) for 3D integration of low-power system. In Technical Digest - International Electron Devices Meeting, IEDM [5703378] https://doi.org/10.1109/IEDM.2010.5703378

ThruChip Interface (TCI) for 3D integration of low-power system. / Kuroda, Tadahiro.

Technical Digest - International Electron Devices Meeting, IEDM. 2010. 5703378.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kuroda, T 2010, ThruChip Interface (TCI) for 3D integration of low-power system. in Technical Digest - International Electron Devices Meeting, IEDM., 5703378, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 10/12/6. https://doi.org/10.1109/IEDM.2010.5703378
Kuroda T. ThruChip Interface (TCI) for 3D integration of low-power system. In Technical Digest - International Electron Devices Meeting, IEDM. 2010. 5703378 https://doi.org/10.1109/IEDM.2010.5703378
Kuroda, Tadahiro. / ThruChip Interface (TCI) for 3D integration of low-power system. Technical Digest - International Electron Devices Meeting, IEDM. 2010.
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