Time-resolved measurement of charging on hole bottoms of SiO2 wafer exposed to plasma etching in a pulsed two-frequency capacitively coupled plasma

Takeshi Ohmori, Takeshi Kamata Goto, Takeshi Kitajima, Toshiaki Makabe

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We experimentally demonstrate a time chart of the shading either of electrons or positive ions on a topologically patterned wafer exposed to plasma etching by synchronized measurements of bottom-charging potential in a SiO 2 hole, current components incident on the wafer, and optical emission CT in the interface in a pulsed two frequency capacitively coupled plasma. The present paper gives a history of charging affected dynamically by an instantaneous electrical response on the bottom.

Original languageEnglish
Pages (from-to)L1105-L1108
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume44
Issue number33-36
DOIs
Publication statusPublished - 2005 Aug 26

Keywords

  • Charging free process
  • Charging in dielectric etching
  • Emission CT
  • Negative charge injection
  • Pulsed 2f-CCP

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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