Topological transition in Bi 1-xSb x studied as a function of Sb doping

Fumitaka Nakamura, Yuka Kousa, Alexey A. Taskin, Yasuo Takeichi, Akinori Nishide, Akito Kakizaki, Marie D'Angelo, Patrick Lefevre, Francois Bertran, Amina Taleb-Ibrahimi, Fumio Komori, Shin Ichi Kimura, Hiroshi Kondo, Yoichi Ando, Iwao Matsuda

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Abstract

Spin- and angle-resolved photoemission spectroscopy measurements were performed on Bi 1-xSb x samples at x=0.04, 0.07, and 0.21 to study the change of the surface band structure from nontopological to topological. Energy shift of the T and L s bulk bands with Sb concentration is quantitatively evaluated. An edge state becomes topologically nontrivial at x=0.04. An additional trivial edge state appears at the L band gap that forms at x0.04 and apparently hybridize with the nontrivial edge state. A scenario for the topological transition mechanism is presented. Related issues of self-energy and temperature dependence of the surface state are also considered.

Original languageEnglish
Article number235308
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number23
DOIs
Publication statusPublished - 2011 Dec 6

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Nakamura, F., Kousa, Y., Taskin, A. A., Takeichi, Y., Nishide, A., Kakizaki, A., D'Angelo, M., Lefevre, P., Bertran, F., Taleb-Ibrahimi, A., Komori, F., Kimura, S. I., Kondo, H., Ando, Y., & Matsuda, I. (2011). Topological transition in Bi 1-xSb x studied as a function of Sb doping. Physical Review B - Condensed Matter and Materials Physics, 84(23), [235308]. https://doi.org/10.1103/PhysRevB.84.235308