Toward charging free plasma processes: Phase space modeling between pulsed plasma and microtrench

T. Makabe, J. Matsui, M. Shibata, N. Nakano

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

Local excess charging is one of the causes of damage to ULSI circuit fabrication, i.e., anomalous etching and electrical breakdown of the gate oxide. The interface between a pulsed plasma and a microstructure on a wafer is investigated by phase space modeling, with a focus on the charging free process.

Original languageEnglish
Pages156-159
Number of pages4
Publication statusPublished - 1998 Dec 1
EventProceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID - Honolulu, HI, USA
Duration: 1998 Jun 41998 Jun 5

Other

OtherProceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID
CityHonolulu, HI, USA
Period98/6/498/6/5

    Fingerprint

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Makabe, T., Matsui, J., Shibata, M., & Nakano, N. (1998). Toward charging free plasma processes: Phase space modeling between pulsed plasma and microtrench. 156-159. Paper presented at Proceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID, Honolulu, HI, USA, .