Toward the ultimate limit of phase change in Ge2Sb 2Te5

R. E. Simpson, M. Krbal, P. Fons, A. V. Kolobov, J. Tominaga, T. Uruga, H. Tanida

Research output: Contribution to journalArticle

180 Citations (Scopus)

Abstract

The limit to which the phase change memory material Ge2Sb 2Te5 can be scaled toward the smallest possible memory cell is investigated using structural and optical methodologies. The encapsulation material surrounding the Ge2Sb2Te 5 has an increasingly dominant effect on the material's ability to change phase, and a profound increase in the crystallization temperature is observed when the Ge2Sb2Te5 layer is less than 6 nm thick. We have found that the Increased crystallization temperature originates from compressive stress exerted from the encapsulation material. By minimizing the stress, we have maintained the bulk crystallization temperature in Ge2Sb2Te5 films just 2 nm thick,

Original languageEnglish
Pages (from-to)414-419
Number of pages6
JournalNano Letters
Volume10
Issue number2
DOIs
Publication statusPublished - 2010 Feb 10
Externally publishedYes

Keywords

  • Gesbte
  • PCRAM
  • Phase change memory
  • Scaling
  • Stress

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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  • Cite this

    Simpson, R. E., Krbal, M., Fons, P., Kolobov, A. V., Tominaga, J., Uruga, T., & Tanida, H. (2010). Toward the ultimate limit of phase change in Ge2Sb 2Te5. Nano Letters, 10(2), 414-419. https://doi.org/10.1021/nl902777z