Transformation of GaAs (0 0 1)-(1 1 1)B facet structure by surface diffusion during molecular beam epitaxy on patterned substrates

S. Koshiba, Y. Nakamura, T. Noda, Shinichi Watanabe, H. Akiyama, H. Sakaki

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The mechanisms of molecular beam epitaxy growth on the mesa patterned substrates which results in the formation of sharp ridge structure were investigated. A simple model, based on the scanning electron microscope measurements, nicely explains the time dependent growth rates as well as the change of the facet shape during the formation of ridge structure originating from the strong Ga atoms migration. The estimated number of atoms crossing the boundary changes according to the alternating facet shape and this indicates the instability in the facet growth. As a result, the mechanism of mesa growth was clarified, which becomes self-regulatory while the facet shape and/or the boundary condition vary as the growth progresses.

Original languageEnglish
Pages (from-to)62-66
Number of pages5
JournalJournal of Crystal Growth
Volume227-228
DOIs
Publication statusPublished - 2001 Jul
Externally publishedYes

Fingerprint

Surface diffusion
surface diffusion
Molecular beam epitaxy
flat surfaces
molecular beam epitaxy
Substrates
mesas
ridges
Atoms
Electron microscopes
Boundary conditions
atoms
Scanning
electron microscopes
gallium arsenide
boundary conditions
scanning

Keywords

  • Diffusion
  • Facet structure
  • Growth
  • MBE

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Transformation of GaAs (0 0 1)-(1 1 1)B facet structure by surface diffusion during molecular beam epitaxy on patterned substrates. / Koshiba, S.; Nakamura, Y.; Noda, T.; Watanabe, Shinichi; Akiyama, H.; Sakaki, H.

In: Journal of Crystal Growth, Vol. 227-228, 07.2001, p. 62-66.

Research output: Contribution to journalArticle

@article{c9724ea5d90c4694bcc215d2be9a0341,
title = "Transformation of GaAs (0 0 1)-(1 1 1)B facet structure by surface diffusion during molecular beam epitaxy on patterned substrates",
abstract = "The mechanisms of molecular beam epitaxy growth on the mesa patterned substrates which results in the formation of sharp ridge structure were investigated. A simple model, based on the scanning electron microscope measurements, nicely explains the time dependent growth rates as well as the change of the facet shape during the formation of ridge structure originating from the strong Ga atoms migration. The estimated number of atoms crossing the boundary changes according to the alternating facet shape and this indicates the instability in the facet growth. As a result, the mechanism of mesa growth was clarified, which becomes self-regulatory while the facet shape and/or the boundary condition vary as the growth progresses.",
keywords = "Diffusion, Facet structure, Growth, MBE",
author = "S. Koshiba and Y. Nakamura and T. Noda and Shinichi Watanabe and H. Akiyama and H. Sakaki",
year = "2001",
month = "7",
doi = "10.1016/S0022-0248(01)00633-9",
language = "English",
volume = "227-228",
pages = "62--66",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Transformation of GaAs (0 0 1)-(1 1 1)B facet structure by surface diffusion during molecular beam epitaxy on patterned substrates

AU - Koshiba, S.

AU - Nakamura, Y.

AU - Noda, T.

AU - Watanabe, Shinichi

AU - Akiyama, H.

AU - Sakaki, H.

PY - 2001/7

Y1 - 2001/7

N2 - The mechanisms of molecular beam epitaxy growth on the mesa patterned substrates which results in the formation of sharp ridge structure were investigated. A simple model, based on the scanning electron microscope measurements, nicely explains the time dependent growth rates as well as the change of the facet shape during the formation of ridge structure originating from the strong Ga atoms migration. The estimated number of atoms crossing the boundary changes according to the alternating facet shape and this indicates the instability in the facet growth. As a result, the mechanism of mesa growth was clarified, which becomes self-regulatory while the facet shape and/or the boundary condition vary as the growth progresses.

AB - The mechanisms of molecular beam epitaxy growth on the mesa patterned substrates which results in the formation of sharp ridge structure were investigated. A simple model, based on the scanning electron microscope measurements, nicely explains the time dependent growth rates as well as the change of the facet shape during the formation of ridge structure originating from the strong Ga atoms migration. The estimated number of atoms crossing the boundary changes according to the alternating facet shape and this indicates the instability in the facet growth. As a result, the mechanism of mesa growth was clarified, which becomes self-regulatory while the facet shape and/or the boundary condition vary as the growth progresses.

KW - Diffusion

KW - Facet structure

KW - Growth

KW - MBE

UR - http://www.scopus.com/inward/record.url?scp=0035398897&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035398897&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(01)00633-9

DO - 10.1016/S0022-0248(01)00633-9

M3 - Article

VL - 227-228

SP - 62

EP - 66

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -