Transmission electron microscopic study of c -BN films deposited on a Si substrate

Syuichi Watanabe, Shojiro Miyake, Weilie Zhou, Yuichi Ikuhara, Tetsuya Suzuki, Masao Murakawa

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Microstructure of c-BN films synthesized by the ion-plating method were observed and characterized by high resolution electron microscopy and microdiffraction. The c-BN films of ∼0.2 μm thickness were deposited on top of ∼0.05 μm of h-BN, which was oriented with its c-axis parallel to the substrate. Lattice image taken along the 〈011〉 direction showed that c-BN film was well crystallized with an interplanar distance ∼2.1 Å, although the grain size was extremely small, from 5 to 20 nm. Further, the microdiffraction pattern along the 〈011〉 direction by focusing the electron beam to ∼20 Å, clearly showed that the small grains consisted of a single crystal of c-BN.

Original languageEnglish
Pages (from-to)3203
Number of pages1
JournalApplied Physics Letters
Volume66
Publication statusPublished - 1995
Externally publishedYes

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ion plating
electrons
electron microscopy
grain size
electron beams
microstructure
high resolution
single crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Watanabe, S., Miyake, S., Zhou, W., Ikuhara, Y., Suzuki, T., & Murakawa, M. (1995). Transmission electron microscopic study of c -BN films deposited on a Si substrate. Applied Physics Letters, 66, 3203.

Transmission electron microscopic study of c -BN films deposited on a Si substrate. / Watanabe, Syuichi; Miyake, Shojiro; Zhou, Weilie; Ikuhara, Yuichi; Suzuki, Tetsuya; Murakawa, Masao.

In: Applied Physics Letters, Vol. 66, 1995, p. 3203.

Research output: Contribution to journalArticle

Watanabe, S, Miyake, S, Zhou, W, Ikuhara, Y, Suzuki, T & Murakawa, M 1995, 'Transmission electron microscopic study of c -BN films deposited on a Si substrate', Applied Physics Letters, vol. 66, pp. 3203.
Watanabe, Syuichi ; Miyake, Shojiro ; Zhou, Weilie ; Ikuhara, Yuichi ; Suzuki, Tetsuya ; Murakawa, Masao. / Transmission electron microscopic study of c -BN films deposited on a Si substrate. In: Applied Physics Letters. 1995 ; Vol. 66. pp. 3203.
@article{fab4e3d3e4624889a7b0f8cb4cd8eea2,
title = "Transmission electron microscopic study of c -BN films deposited on a Si substrate",
abstract = "Microstructure of c-BN films synthesized by the ion-plating method were observed and characterized by high resolution electron microscopy and microdiffraction. The c-BN films of ∼0.2 μm thickness were deposited on top of ∼0.05 μm of h-BN, which was oriented with its c-axis parallel to the substrate. Lattice image taken along the 〈011〉 direction showed that c-BN film was well crystallized with an interplanar distance ∼2.1 {\AA}, although the grain size was extremely small, from 5 to 20 nm. Further, the microdiffraction pattern along the 〈011〉 direction by focusing the electron beam to ∼20 {\AA}, clearly showed that the small grains consisted of a single crystal of c-BN.",
author = "Syuichi Watanabe and Shojiro Miyake and Weilie Zhou and Yuichi Ikuhara and Tetsuya Suzuki and Masao Murakawa",
year = "1995",
language = "English",
volume = "66",
pages = "3203",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Transmission electron microscopic study of c -BN films deposited on a Si substrate

AU - Watanabe, Syuichi

AU - Miyake, Shojiro

AU - Zhou, Weilie

AU - Ikuhara, Yuichi

AU - Suzuki, Tetsuya

AU - Murakawa, Masao

PY - 1995

Y1 - 1995

N2 - Microstructure of c-BN films synthesized by the ion-plating method were observed and characterized by high resolution electron microscopy and microdiffraction. The c-BN films of ∼0.2 μm thickness were deposited on top of ∼0.05 μm of h-BN, which was oriented with its c-axis parallel to the substrate. Lattice image taken along the 〈011〉 direction showed that c-BN film was well crystallized with an interplanar distance ∼2.1 Å, although the grain size was extremely small, from 5 to 20 nm. Further, the microdiffraction pattern along the 〈011〉 direction by focusing the electron beam to ∼20 Å, clearly showed that the small grains consisted of a single crystal of c-BN.

AB - Microstructure of c-BN films synthesized by the ion-plating method were observed and characterized by high resolution electron microscopy and microdiffraction. The c-BN films of ∼0.2 μm thickness were deposited on top of ∼0.05 μm of h-BN, which was oriented with its c-axis parallel to the substrate. Lattice image taken along the 〈011〉 direction showed that c-BN film was well crystallized with an interplanar distance ∼2.1 Å, although the grain size was extremely small, from 5 to 20 nm. Further, the microdiffraction pattern along the 〈011〉 direction by focusing the electron beam to ∼20 Å, clearly showed that the small grains consisted of a single crystal of c-BN.

UR - http://www.scopus.com/inward/record.url?scp=36449008042&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449008042&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:36449008042

VL - 66

SP - 3203

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -