Transport characteristic control of field-effect transistors with single-walled carbon nanotube films using electrode metals with low and high work functions

Hideyuki Maki, Tetsuya Sato, Koji Ishibashi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We have fabrficated field-effect transistors with single-walled carbon nanotube films using various work-function metals (Mg, Al, Ti, and Ni) as the source and drain electrodes to control the transfer characteristic. The n-type transfer characteristic is obtained from the device with low-work-function metal (Mg), and the p-type characteristic is obtained from the device with medium- and high-work-function metals (Al, Ti, and Ni). The ambipolar characteristic of the device with Mg electrodes in air is converted to the n-type characteristic by maintaining in vacuum. The device with Mg as a drain electrode and Ni as a source electrode shows the ambipolar characteristic at small and large drain-source voltages. This device might be able to simultaneously inject electrons and holes into a SWNT.

Original languageEnglish
Pages (from-to)7234-7236
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number9 A
DOIs
Publication statusPublished - 2006 Sep 7

Fingerprint

Single-walled carbon nanotubes (SWCN)
Field effect transistors
field effect transistors
carbon nanotubes
Electrodes
electrodes
Metals
metals
Vacuum
Electrons
Electric potential
Air
vacuum
air
electric potential
electrons

Keywords

  • Ambipolar transport
  • Carbon nanotube
  • Field-effect transistor
  • Film
  • N-type transport
  • Work function

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "We have fabrficated field-effect transistors with single-walled carbon nanotube films using various work-function metals (Mg, Al, Ti, and Ni) as the source and drain electrodes to control the transfer characteristic. The n-type transfer characteristic is obtained from the device with low-work-function metal (Mg), and the p-type characteristic is obtained from the device with medium- and high-work-function metals (Al, Ti, and Ni). The ambipolar characteristic of the device with Mg electrodes in air is converted to the n-type characteristic by maintaining in vacuum. The device with Mg as a drain electrode and Ni as a source electrode shows the ambipolar characteristic at small and large drain-source voltages. This device might be able to simultaneously inject electrons and holes into a SWNT.",
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AU - Sato, Tetsuya

AU - Ishibashi, Koji

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N2 - We have fabrficated field-effect transistors with single-walled carbon nanotube films using various work-function metals (Mg, Al, Ti, and Ni) as the source and drain electrodes to control the transfer characteristic. The n-type transfer characteristic is obtained from the device with low-work-function metal (Mg), and the p-type characteristic is obtained from the device with medium- and high-work-function metals (Al, Ti, and Ni). The ambipolar characteristic of the device with Mg electrodes in air is converted to the n-type characteristic by maintaining in vacuum. The device with Mg as a drain electrode and Ni as a source electrode shows the ambipolar characteristic at small and large drain-source voltages. This device might be able to simultaneously inject electrons and holes into a SWNT.

AB - We have fabrficated field-effect transistors with single-walled carbon nanotube films using various work-function metals (Mg, Al, Ti, and Ni) as the source and drain electrodes to control the transfer characteristic. The n-type transfer characteristic is obtained from the device with low-work-function metal (Mg), and the p-type characteristic is obtained from the device with medium- and high-work-function metals (Al, Ti, and Ni). The ambipolar characteristic of the device with Mg electrodes in air is converted to the n-type characteristic by maintaining in vacuum. The device with Mg as a drain electrode and Ni as a source electrode shows the ambipolar characteristic at small and large drain-source voltages. This device might be able to simultaneously inject electrons and holes into a SWNT.

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