Transport of deposited atoms throughout strain-mediated self-assembly

Oussama Moutanabbir, Satoru Miyamoto, Eugene E. Haller, Kohei M Itoh

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Using enriched isotopes, we developed a method to elucidate the long-standing issue of Ge transport governing the strain-driven self-assembly. Here Ge76 was employed to form the 2D metastable layer on a Si(001) surface, while the 3D transition and growth were completed by additional evaporation of Ge70. This isotope tracing combined with the analysis of the Ge-Ge LO phonon enables the tracking of the origin of Ge atoms and their flow towards the growing islands. This atomic transport was quantified based on the quasiharmonic approximation of Ge-Ge vibrations and described using a rate equation model.

Original languageEnglish
Article number026101
JournalPhysical Review Letters
Volume105
Issue number2
DOIs
Publication statusPublished - 2010 Jul 6

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self assembly
isotopes
tracing
atoms
evaporation
vibration
approximation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Transport of deposited atoms throughout strain-mediated self-assembly. / Moutanabbir, Oussama; Miyamoto, Satoru; Haller, Eugene E.; Itoh, Kohei M.

In: Physical Review Letters, Vol. 105, No. 2, 026101, 06.07.2010.

Research output: Contribution to journalArticle

Moutanabbir, Oussama ; Miyamoto, Satoru ; Haller, Eugene E. ; Itoh, Kohei M. / Transport of deposited atoms throughout strain-mediated self-assembly. In: Physical Review Letters. 2010 ; Vol. 105, No. 2.
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