Transport properties of photoexcited carriers in a fibonacci superlattice

A. A. Yamaguchi; T. Saiki; T. Tada; T. Ninomiya; K. Misawa; T. Kobayashi; M. Kuwata-Gonokami; T. Yao

doi:10.1016/0038-1098(90)90767-6

Transport properties of photoexcited carriers in a fibonacci superlattice

A. A. Yamaguchi, T. Saiki, T. Tada, T. Ninomiya, K. Misawa, T. Kobayashi, M. Kuwata-Gonokami, T. Yao

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

We have investigated the electronic structure and the perpendicular transport properties of photoexcited carriers in a GaAs/AlAs Fibonacci superlattice (SL) with an enlarged well (EW) by means of photoluminescence excitation (PLE) spectroscopy and picosecond luminescence measurements. The PLE spectrum of the SL emission shows the structure corresponding to the subbands obtained in the Fibonacci system by splitting of the level of n=1 in the isolated well. Difference in the PLE spectrum between the SL and EW emission also shows that the only very few carriers generated in the lowest subbands in the Fibonacci SL reach the EW at 4 K, and comparison with results for a random and a periodic SL's suggests that the degree of localization in the Fibonacci SL is intermediate among the three systems. It is also found from the temporal evolution behaviors of the photoluminescence that about a half of the carriers created in higher energy states travel to EW within 50 ps and the phonon-assisted transport of the other half at 50 K in the Fibonacci and the periodic SL's is faster than that in the random SL.

Original language	English
Pages (from-to)	955-961
Number of pages	7
Journal	Solid State Communications
Volume	75
Issue number	12
DOIs	https://doi.org/10.1016/0038-1098(90)90767-6
Publication status	Published - 1990 Sept
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(90)90767-6

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@article{e22de663d06e4385b7cb55252e3debc9,

title = "Transport properties of photoexcited carriers in a fibonacci superlattice",

abstract = "We have investigated the electronic structure and the perpendicular transport properties of photoexcited carriers in a GaAs/AlAs Fibonacci superlattice (SL) with an enlarged well (EW) by means of photoluminescence excitation (PLE) spectroscopy and picosecond luminescence measurements. The PLE spectrum of the SL emission shows the structure corresponding to the subbands obtained in the Fibonacci system by splitting of the level of n=1 in the isolated well. Difference in the PLE spectrum between the SL and EW emission also shows that the only very few carriers generated in the lowest subbands in the Fibonacci SL reach the EW at 4 K, and comparison with results for a random and a periodic SL's suggests that the degree of localization in the Fibonacci SL is intermediate among the three systems. It is also found from the temporal evolution behaviors of the photoluminescence that about a half of the carriers created in higher energy states travel to EW within 50 ps and the phonon-assisted transport of the other half at 50 K in the Fibonacci and the periodic SL's is faster than that in the random SL.",

author = "Yamaguchi, {A. A.} and T. Saiki and T. Tada and T. Ninomiya and K. Misawa and T. Kobayashi and M. Kuwata-Gonokami and T. Yao",

note = "Funding Information: Acknowledgment-This research was supported by Grant-in-Aid for Scientific Research on Priority Areas “Quasicrystal{\textquoteright} from the Ministry of Education, Science and Culture. The part of the picosecond measurements was supported by Grant-in-Aid for Specially Promoted Research and for General Scientific Research B.",

year = "1990",

month = sep,

doi = "10.1016/0038-1098(90)90767-6",

language = "English",

volume = "75",

pages = "955--961",

journal = "Solid State Communications",

issn = "0038-1098",

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TY - JOUR

T1 - Transport properties of photoexcited carriers in a fibonacci superlattice

AU - Yamaguchi, A. A.

AU - Saiki, T.

AU - Tada, T.

AU - Ninomiya, T.

AU - Misawa, K.

AU - Kobayashi, T.

AU - Kuwata-Gonokami, M.

AU - Yao, T.

N1 - Funding Information: Acknowledgment-This research was supported by Grant-in-Aid for Scientific Research on Priority Areas “Quasicrystal’ from the Ministry of Education, Science and Culture. The part of the picosecond measurements was supported by Grant-in-Aid for Specially Promoted Research and for General Scientific Research B.

PY - 1990/9

Y1 - 1990/9

N2 - We have investigated the electronic structure and the perpendicular transport properties of photoexcited carriers in a GaAs/AlAs Fibonacci superlattice (SL) with an enlarged well (EW) by means of photoluminescence excitation (PLE) spectroscopy and picosecond luminescence measurements. The PLE spectrum of the SL emission shows the structure corresponding to the subbands obtained in the Fibonacci system by splitting of the level of n=1 in the isolated well. Difference in the PLE spectrum between the SL and EW emission also shows that the only very few carriers generated in the lowest subbands in the Fibonacci SL reach the EW at 4 K, and comparison with results for a random and a periodic SL's suggests that the degree of localization in the Fibonacci SL is intermediate among the three systems. It is also found from the temporal evolution behaviors of the photoluminescence that about a half of the carriers created in higher energy states travel to EW within 50 ps and the phonon-assisted transport of the other half at 50 K in the Fibonacci and the periodic SL's is faster than that in the random SL.

AB - We have investigated the electronic structure and the perpendicular transport properties of photoexcited carriers in a GaAs/AlAs Fibonacci superlattice (SL) with an enlarged well (EW) by means of photoluminescence excitation (PLE) spectroscopy and picosecond luminescence measurements. The PLE spectrum of the SL emission shows the structure corresponding to the subbands obtained in the Fibonacci system by splitting of the level of n=1 in the isolated well. Difference in the PLE spectrum between the SL and EW emission also shows that the only very few carriers generated in the lowest subbands in the Fibonacci SL reach the EW at 4 K, and comparison with results for a random and a periodic SL's suggests that the degree of localization in the Fibonacci SL is intermediate among the three systems. It is also found from the temporal evolution behaviors of the photoluminescence that about a half of the carriers created in higher energy states travel to EW within 50 ps and the phonon-assisted transport of the other half at 50 K in the Fibonacci and the periodic SL's is faster than that in the random SL.

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Transport properties of photoexcited carriers in a fibonacci superlattice

Abstract

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