Abstract
We theoretically examine the transport properties of quantum dots with strong electron-phonon interaction. When a separation between discrete electron-levels in a quantum dot matches the energy of the LO phonons, the electron-phonon interaction results in polarons, coherent states consisting of an electron and LO phonons. The Rabi splitting between two levels in the quantum dot is observable in a peak structure of the differential conductance G as a function of the bias voltage. The polaron formation suppresses the peak height of G, which is due to the competition between the resonant tunneling (resonance between a level in the dot and states in the leads) and the polaron formation (Rabi oscillation between two levels in the dot). G shows a sharp dip at the midpoint between the split peaks. This is attributable to the destructive interference between bonding and anti-bonding states in a composite system of an electron and phonons.
| Original language | English |
|---|---|
| Pages (from-to) | 139-142 |
| Number of pages | 4 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 17 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 2003 Apr |
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Keywords
- Electron-phonon interaction
- Polaron
- Resonant tunneling
- Self-assembled quantum dot
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Transport properties of quantum dots with strong electron-phonon interaction. / Tasai, Tomoki; Eto, Mikio.
In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 17, No. 1-4, 04.2003, p. 139-142.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Transport properties of quantum dots with strong electron-phonon interaction
AU - Tasai, Tomoki
AU - Eto, Mikio
PY - 2003/4
Y1 - 2003/4
N2 - We theoretically examine the transport properties of quantum dots with strong electron-phonon interaction. When a separation between discrete electron-levels in a quantum dot matches the energy of the LO phonons, the electron-phonon interaction results in polarons, coherent states consisting of an electron and LO phonons. The Rabi splitting between two levels in the quantum dot is observable in a peak structure of the differential conductance G as a function of the bias voltage. The polaron formation suppresses the peak height of G, which is due to the competition between the resonant tunneling (resonance between a level in the dot and states in the leads) and the polaron formation (Rabi oscillation between two levels in the dot). G shows a sharp dip at the midpoint between the split peaks. This is attributable to the destructive interference between bonding and anti-bonding states in a composite system of an electron and phonons.
AB - We theoretically examine the transport properties of quantum dots with strong electron-phonon interaction. When a separation between discrete electron-levels in a quantum dot matches the energy of the LO phonons, the electron-phonon interaction results in polarons, coherent states consisting of an electron and LO phonons. The Rabi splitting between two levels in the quantum dot is observable in a peak structure of the differential conductance G as a function of the bias voltage. The polaron formation suppresses the peak height of G, which is due to the competition between the resonant tunneling (resonance between a level in the dot and states in the leads) and the polaron formation (Rabi oscillation between two levels in the dot). G shows a sharp dip at the midpoint between the split peaks. This is attributable to the destructive interference between bonding and anti-bonding states in a composite system of an electron and phonons.
KW - Electron-phonon interaction
KW - Polaron
KW - Resonant tunneling
KW - Self-assembled quantum dot
UR - http://www.scopus.com/inward/record.url?scp=0037394977&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037394977&partnerID=8YFLogxK
U2 - 10.1016/S1386-9477(02)00758-0
DO - 10.1016/S1386-9477(02)00758-0
M3 - Article
AN - SCOPUS:0037394977
VL - 17
SP - 139
EP - 142
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1-4
ER -